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Combinatorial Synthesis Approach for Optimizing Oxide/Si Interfaces for the Future Ulsi

  • T. Chikyow (a1), P. Ahmet (a1), T. Naruke (a1), K. Nakajima (a1), N. Okazaki (a1), K. Hasegawa (a2), H. Minami (a2), K. Itaka (a2), T. Koida (a2), J.H. Song (a2), M. Yoshimoto (a3), T. Hasegawa (a3), M. Kawasaki (a4) and H. Koinima (a5)...

Abstract

A combinatorial material synthesis with temperature gradient heating system was employed to optimizing growth parameters for oxide growth on Si substrate. From the obtained results, it was found the dielectric property depends on the growth temperature as well as the composition. The interface structures were investigated by high resolution electron microscopy with a series of specimens fabricated by micro sampling method. The results showed that amorphous oxide region and SiO2 layer were formed at the interface. It was speculated that the amorphous oxide region contributed to the reduction of the dielectric property. To avoid the amorphous and SiO2 formation at the oxide/Si interface, a few kinds of intermediate layers were inserted and tested to find the possibility of abrupt interface formation.

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1) For example, see “The National Technology Roadmap for Semiconductor (SIA, Semiconductor Industry Association)” p13.
2) ZrO2:Kransnosvodtsev, S.I. and Pechen, E.V., Physica C 185/187 2097 (1991). HfO2: R. de Reus, F.W. Saris, G.J. van der Kolk, C. Wittmer, B.Dam, D.H.A. Blank, D.J. Adelerhof, and J. Flokstra,Mater, Sci Engr.B7 135 (1990).
3) McKee, R.A., Walker, F.J. and Chisholm, M.F., Phys.Rev.Lett., 81 3014 (1998).
4) Chikyow, T., Bedair, S.M., Tye, L.A., and El-Masry, N.A., Appl.Phys.Lett., 60 1030 (1994).
5) Hubbard, K.J. and Schlom, D.G., J.Mater.Res., 11 2757 (1996).
6) Chambers, S.A., Liang, Y., Yu, Z., Droopad, R., Ramdani, J., and Eisenbeiser, K., Appl.Phys.Lett., 77 11 (2000).
7) For example,Shinriki, H., Nakata, M., Nishioka, Y., and Mukai, K., IEEE Electron Device Lett., 10 514 (1989).
8) R. van Dover and Schneemeyer, L.F.,IEEE Electron Device Lett.,19 329 (1998).
9) Chikyow, T. and Koguchi, N., J.Vac.Sci and Technol B16 2538 (1998).
10) For example, Bringans, R.D., Uhrberg, R.I.G.,Olmstead, M.A. and Bachrach, R.Z., Phys Rev. B36 9569 (1987). P. Kreager and J. Pollman, Phys.Rev.B47 1898 (1993).
11) Chikyow, T., Takakura, M., Yoshimoto, M. and Koinuma, H. to appear in Physica C.
12) For example,Bednorz, J.B. and Muller, K.A., Z Phys.,B64 189 (1986).
13) For example, Pearsall, T.P.: “GaInAsP aAlloy Laser (John Wiley & Sons, 1982)” Chap.8.
14) Xiang, X.D., Annu.Rev.Mater.Sci.,29 149 (1999).
15) Lippmaa, M. and Kawasaki, M. to appear in the Physica Kawasaki, C. et al reported the “Parallel synthesis and high-throughtput characterization of Oxide superlattice” in the SPIE “Combinatorial and Composition Spread. Techniques in the Materials and Device Development”, in 2000.
16) Matsumoto, Y., Murakami, M., Shono, T., Hasegawa, T., Fukumura, T., Kawasaki, M., Ahmet, P., Chikyow, T., Koshihara, S., and Koinuma, H., Science 291 854 (2001).
17) Dover, R. van and Schneemeyer, L.F., IEEE Electron Device Lett., 19 329 (1998).
18) Shannon, R.D. J.Appl.Phys., 73 1 (1993).
19) Moll, L. and Tarui, Y., IEEE Trans.Elect.Dev. ED–10, 338 (1963).
20) Hitachi Co.Ltd.product. Umemura and Kakibayashi,:private communication.
21) For example,Bednorz, J.B. and Muller, K.A., Z Phys., B64 189 (1986).
22) For example, Pearsall, T.P.: “GaInAsP aAlloy Laser (John Wiley & Sons, 1982)” Chap.8.
23) Ahmet, P., Koida, T., Takakura, M., Yoshimoto, M., Tanaka, M., Tkaguchi, M., Koinuma, H. and Chikyow, T. et al to appear in the Applied Surface Science.

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