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Chemical Bonding and Lattice Mismatch in Semiconductorinsulator Heteroepitaxy: SrF2 on Si(111)

Published online by Cambridge University Press:  28 February 2011

Marjorie A. Olmstead  and
R. D. Bringans
Marjorie A. Olmstead
Affiliation:
Department of Physics, University of California, Berkeley, CA 94720
R. D. Bringans
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

The growth of SrF2 on Si(111) is investigated using photoemission spectroscopy and compared to the growth of CaF2 on Si(l11). Both CaF2 and SrF2 have a fluorite lattice structure closely related to silicons diamond lattice structure. However, while the room temperature lattice constant of Si is only 0.6% smaller than that of CaF2, it is 6.8% smaller than that of SrF2. The photoemission results for thin films of SrF2 on Si(111) are very similar to previous measurements of the CaF2-on-Si(111) interface, reflective of strong silicon-cation bonding and the removal of fluorine from the interface. These results indicate that the chemical and electronic driving forces to dissociate the CaF2 or SrF2 molecule at the fluoride-silicon interface dominate over the structural constraints induced by the lattice mismatch.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 419
Copyright
Copyright © Materials Research Society 1988

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