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Charge Collection in a-Si:H Particle Detectors

Published online by Cambridge University Press:  25 February 2011

T. Pochet ,
J. Dubeau ,
L. A. Hamel ,
B. Equer  and
A. Karar
T. Pochet
Affiliation:
Laboratoire de Physique Nucléaire and GCM, Université de Montréal, Montreal, Canada
J. Dubeau
Affiliation:
Laboratoire de Physique Nucléaire and GCM, Université de Montréal, Montreal, Canada
L. A. Hamel
Affiliation:
Laboratoire de Physique Nucléaire and GCM, Université de Montréal, Montreal, Canada
B. Equer
Affiliation:
Laboratoire PICM, Ecole Polytechnique, Palaiseau, France
A. Karar
Affiliation:
Laboratoire de Physique Corpusculaire, Collège de France, Paris, France.
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Abstract

The signal produced by protons in a-Si:H detectors has been measured. The charge collected from a 5.8 μm p-i-n diode is studied as a function of the reverse bias and the energy deposited in the detector. The charge collection process is discussed. Limits on the pair-creation energy, Ep, are obtained (3.4 eV<Ep< 4.5 eV).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 661
Copyright
Copyright © Materials Research Society 1989

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References

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