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Characterizations Of Zr/Si1-x-yGexCy After Rapid Thermal Annealing

Published online by Cambridge University Press:  10 February 2011

V. Aubry-Fortuna ,
M. Barthula ,
F. Meyer ,
A. Eyal ,
C. Cytermann ,
M. Eizenberg  and
O. Chaix-Pluchery
V. Aubry-Fortuna
Affiliation:
Institut d'Electronique Fondamentale, CNRS URA 22, Bât. 220, Université Paris Sud, 91405 Orsay Cedex, France, fortuna@ief.u-psud.fr
M. Barthula
Affiliation:
Institut d'Electronique Fondamentale, CNRS URA 22, Bât. 220, Université Paris Sud, 91405 Orsay Cedex, France, fortuna@ief.u-psud.fr
F. Meyer
Affiliation:
Institut d'Electronique Fondamentale, CNRS URA 22, Bât. 220, Université Paris Sud, 91405 Orsay Cedex, France, fortuna@ief.u-psud.fr
A. Eyal
Affiliation:
Solid-State Institute, Technion, Haifa 32000, Israel
C. Cytermann
Affiliation:
Solid-State Institute, Technion, Haifa 32000, Israel
M. Eizenberg
Affiliation:
Solid-State Institute, Technion, Haifa 32000, Israel
O. Chaix-Pluchery
Affiliation:
LMGP, CNRS UMR 5628, ENSPG, BP75, 38402 St Martin d‘Héres, France
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Abstract

In this work, we have investigated the reaction between Zr and SiGeC alloys after Rapid Thermal anneals performed at 800°C for 5 min. The interactions of the metal with the alloy have been investigated by X-Ray diffraction. Four crystal X-Ray diffraction was also performed to measure the residual strain in the epilayer. The final compound of the reaction is the C49- Zr(Si1-xGex)2 phase. The C49 film contains the same Ge concentration as in the as-deposited Si1-x-yGexCy layer. This suggests that no Ge-segregation occurs during annealing. Only a small strain relaxation is detected in the unreacted SiGe epilayer during the reaction. The addition of C in the epilayer prevents any strain relaxation. These results are in contrast with those observed in systems with Ti and Co, and show that the system Zr-Si-Ge is much more stable. Schottky barrier heights have been also measured: annealing leads to a slight decrease of the barrier without any degradation of the contact. The resistivity of the C49 film is about 80 μΩcm. These results indicate that Zr may be a good candidate for contacts on IV-IV alloys in term of thermal stability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 49
Copyright
Copyright © Materials Research Society 1998

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