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Cathodoluminescence of Lateral Epitaxial Overgrowth GaN: Dependencies on Excitation Conditions

Published online by Cambridge University Press:  15 March 2011

G. S. Cargill III ,
Eva Campo ,
Lanping Yue ,
J. Ramer ,
M. Schurman  and
I. T. Ferguson
G. S. Cargill III
Affiliation:
Lehigh University, Bethlehem, PA 18015, gsc3@lehigh.edu
Eva Campo
Affiliation:
Lehigh University, Bethlehem, PA 18015, gsc3@lehigh.edu
Lanping Yue
Affiliation:
Lehigh University, Bethlehem, PA 18015, gsc3@lehigh.edu
J. Ramer
Affiliation:
EMCORE Corp., Somerset, NJ 08873
M. Schurman
Affiliation:
EMCORE Corp., Somerset, NJ 08873
I. T. Ferguson
Affiliation:
EMCORE Corp., Somerset, NJ 08873
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Abstract

We have found that near-band-edge cathodoluminescence (CL) emission decreases with time for some nominally undoped GaN samples. The rate of intensity decrease depends on the incident beam current. It also depends on the size of the area being scanned, which is determined by the magnification used, although the electron beam voltage and current are held constant and similar regions of GaN are being examined. Faster decrease with time occurs with higher beam currents and higher magnifications. The reduced luminescence efficiency persists over at least 24 hour beam-off periods. The dependence of CL intensity on beam current and on scanned area may be a result of different levels of local charging, and structural modifications caused by this charging, for different beam current and magnification settings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T5.2.1
Copyright
Copyright © Materials Research Society 2000

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References

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