Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-22T05:17:52.453Z Has data issue: false hasContentIssue false
  • English
  • Français

Bandgap Engineering of ZnO Transparent Conducting Films

Published online by Cambridge University Press:  01 February 2011

K. Matsubara ,
H. Tampo ,
A. Yamada ,
P. Fons ,
K. Iwata ,
K. Sakurai  and
S. Niki
K. Matsubara
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
H. Tampo
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
A. Yamada
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
P. Fons
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
K. Iwata
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
K. Sakurai
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
S. Niki
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
Get access

Abstract

Low resistivity and transparent Al doped ZnMgO films were deposited on glass substrates by a pulsed laser deposition system. For up to 32 atm% of Mg content, segregation of a MgO phase was not observed. The bandgap of these films could be widened to about 4 eV with increasing Mg content. The relation between bandgap and resistivity was found to be a trade-off; i.e. the larger the bandgap, the higher the resistivity. The maximum bandgap among films with an electrical resistivity of less than 10-3 Ω cm was 3.94 eV. The average optical transmittance of these films was more than 90 % for wavelengths λ between 400 and 1100 nm. The transmittance around λ = 330 nm was still 50 %.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B7.2
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nimemoto, T., Hashimoto, Y., Satoh, T., Negami, T., Takakura, H., and Hamakawa, Y., J. Appl. Phys. 89, 8327 (2001).Google Scholar
2. Ohtomo, A., Kawasaki, M., Koida, T., Masubuchi, K., Koinuma, H., Sakurai, Y., Yoshida, Y., Yasuda, T., and Segawa, Y., Appl. Phys. 72, 2466 (1998).Google Scholar
3. Park, W. I., Yi, G., and Jang, H. M., Appl. Phys. Lett. 79, 2022 (2001).Google Scholar
4. Minemoto, T., Negami, T., Nishiwaki, S., Takakura, H., and Hamakawa, Y., Thin Solid Films 372, 173 (2000)Google Scholar
5. Matsubara, K., Fons, P., Iwata, K., Yamada, A., and Niki, S., Thin Solid Films 422, 176 (2002).Google Scholar
6. Matsubara, K., Fons, P., Iwata, K., Yamada, A., Sakurai, K., Tampo, H., and Niki, S., Thin Solid Films (in press).Google Scholar
7. Kim, H., Pique, A., Horwitz, J.S., Murata, H., Kafafi, Z.H., Gilmore, C.M., and Chrisey, D.B., Thin Solid Films 377-378, 798 (2000).Google Scholar
8. Sarver, J. F., Katnack, F. L., and Hummel, F. A., J. Electrochem. Soc. 106, 960 (1959).Google Scholar