Penetration of alien atoms (Be, Ni) into Be, Al, Zr, Si and diamond was investigated under Ar+ ion bombardment of samples having thermally evaporated films of 30-50 nm. Sputtering was carried out using a wide energy spectrum beam of Ar+ ions of 9.4 keV to dose D=lxl0 -10 ion/cm2. Implanted atom distribution in the targets was measured by Rutherford backscattering spectrometry (RBS) of tT and He+ ions with energy of 1.6 MeV as well as secondary ion mass-spectrometry (SIMS).
During the bombardment, the penetration depth of Ar atoms increases with dose linearly. This depth is more than 3...20 times deeper than the projected range of bombarding ions and recoil atoms. This is a “deep action” effect.
The analysis shows that the experimental data for foreign atoms penetration depth are similar to the data calculated for atom migration through the interstitial site in a field of internal (lateral) compressive stresses created in the near-surface layer of the substrate as a result of implantation. Under these experimental conditions atom ratio r/rm (r¡ - radius of dopant, rm - radius target of substrate) can play a principal determining role.