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Annealing of Ion-Implanted Hydrogenated Amorphous Silicon: Stable and Removable Damage

Published online by Cambridge University Press:  01 January 1993

A.J.M. Berntsen ,
P.A. Stolk ,
W.F. VAN DER WEG  and
F.W. Saris
A.J.M. Berntsen
Affiliation:
Debye Institute, Utrecht University, P.O.Box 80000, 3508 TA Utrecht, The Netherlands
P.A. Stolk
Affiliation:
FOM Institute for Atomic and Molecular Physics, Utrecht University, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands
W.F. VAN DER WEG
Affiliation:
Debye Institute, Utrecht University, P.O.Box 80000, 3508 TA Utrecht, The Netherlands
F.W. Saris
Affiliation:
Debye Institute, Utrecht University, P.O.Box 80000, 3508 TA Utrecht, The Netherlands
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Abstract

Hydrogenated amorphous silicon (a-Si:H) films were irradiated with 1-MeV Si+ ions. The accumulation and annealing of ion damage was investigated by Raman scattering, optical reflection and transmission, and conductivity measurements. For damage levels up to 0.003 displacements per atom, electrical defects are created with no measurable effect on the structural properties. These defects can be completely annealed out at 180°C. Further irradiation results in an increase in the average bond-angle variation in the films. This structural disorder causes a decrease of the optical band gap with 0.46 eV. The structural changes caused by high-dose implantation can not be reversed by annealing at 180° C, which results in the formation of anneal-stable electrical defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 303
Copyright
Copyright © Materials Research Society 1993

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References

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