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Anisotropic Etching of Heavily Doped Polysilicon by a Hot Cl2 Molecular Beam

Published online by Cambridge University Press:  26 February 2011

T. Ono ,
S. Hiraoka  and
K. Suzuki
T. Ono
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
S. Hiraoka
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
K. Suzuki
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185, Japan
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Abstract

Anisotropic etching of n+ poly-Si is achieved using a hot Cl2 molecular beam and a sidewall protection technique. A hot molecular beam is produced by a free jet expansion of a gas heated in a furnace. A nitrogen radical beam is used to prevent the sidewall etching. The etch rate of n+ poly-Si is 4.3 nm/min at the anisotropic etching condition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 31
Copyright
Copyright © Materials Research Society 1991

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