Hostname: page-component-745bb68f8f-g4j75 Total loading time: 0 Render date: 2025-01-15T04:19:04.667Z Has data issue: false hasContentIssue false
  • English
  • Français

Analysis of Silicide / Diffusion Contact Resistance Making Use of Transmission Line Stuctures

Published online by Cambridge University Press:  01 February 2011

Amal Akheyar ,
Anne Lauwers ,
Richard Lindsay ,
Muriel de Potter ,
Georg Tempel  and
Karen Maex
Amal Akheyar
Affiliation:
Infineon technologies AG, affiliated to IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
Anne Lauwers
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium Corresponding author: Amal.Akheyar@imec.be
Richard Lindsay
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium Corresponding author: Amal.Akheyar@imec.be
Muriel de Potter
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium Corresponding author: Amal.Akheyar@imec.be
Georg Tempel
Affiliation:
Infineon technologies AG, affiliated to IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
Karen Maex
Affiliation:
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium Corresponding author: Amal.Akheyar@imec.be
Get access

Abstract

This work deals with the analysis of the resistances of Co-silicided As and B junctions. The influence of junction formation and salicide process on contact resistance was investigated. The contact resistance between the silicide and source/drain region was studied by making use of dedicated transmission line structures. The transmission line structures (TLM) consist of alternating silicided and unsilicided diffusion segments, obtained by making use of a salicide blocking mask. Our TLM results show that the contact resistance has a strong dependence on the doping profile of the diffused region and increases with decreasing surface doping, with increasing Co-silicide thickness, annealing temperatures and time of silicidation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B1.10
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Osburn, C.M., Bellur, K.R., Thin Solid Films, 332, 428–436 (1998)Google Scholar
2. Scott, D.B., Chapman, R. A., Wei, C., Mahant-Shetti, S. S., Haken, R.A. and Holloway, T.C., IEEE Trans. on Electron Devices, ED-34(3), 562–574 (1987).Google Scholar