Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-26T12:52:21.843Z Has data issue: false hasContentIssue false

An Effective Way to Suppress the Pyrochlore Phase Formation in SBT Thin Films

Published online by Cambridge University Press:  01 February 2011

Se-Yeon Jung
Affiliation:
Department of Materials Science & Engineering, Daejin University Pochun-si, Kyunggi-do 487–711, Korea (South)
Woo-Chul Kwak
Affiliation:
Department of Materials Science & Engineering, Daejin University Pochun-si, Kyunggi-do 487–711, Korea (South)
Seung-Joon Hwang
Affiliation:
Department of Materials Science & Engineering, Daejin University Pochun-si, Kyunggi-do 487–711, Korea (South)
Yun-Mo Sung
Affiliation:
Department of Materials Science & Engineering, Daejin University Pochun-si, Kyunggi-do 487–711, Korea (South)
Get access

Abstract

Sr0.7Bi2.4Ta2O9 (SBT) thin films were deposited on Pt/Ti/SiO2/Si substrates with and without a seed layer of ∼40 nm thickness using sol-gel and spin coating methods. The influence of seed layer on the phase formation characteristics of SBT thin films was investigated using x-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses. Formation of pyrochlore as well as Aurivillius phase was observed in both the unseeded and seeded SBT films heated at 740°C. However, it was revealed that Aurivillius phase formation was enhanced in seeded SBT thin films and pyrochlore phase formation was highly suppressed. In this study, two possible mechanisms for the suppression of pyrochlore phase formation were proposed from the perspectives of activation energy difference for Aurivillius and pyrochlore phase formation and Bi-ion diffusion to pyrochlore phase.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Araujo, C. A. P., Cuchiaro, J. D., McMillan, L. D., Scott, M. C., and Scott, J. F., Nature 347, 627 (1995).Google Scholar
2. Desu, S. B. and Li, T. K., Mater. Sci. Eng. B34, L4 (1995).Google Scholar
3. Kwak, W-C. and Sung, Y-M., J. Mater. Res. 17, 1463 (2002).Google Scholar
4. Kato, K., Zheng, C., Finder, J. M., and Dey, S. K., J. Am. Ceram. 81, 1869 (1999).Google Scholar
5. Zhou, Q. F., Chan, H. L. W., and Choy, L. L., J. Non-Cryst. Solids 254, 106 (1999).Google Scholar
6. Rodriguez, M. A., Boyle, T. J., Hernandez, B. A., Buchheit, C. D., and Eatough, M. O., J. Mater. Res. 11, 2282 (1996)Google Scholar
7. Lee, S-H., Lee, J-K., Yoon, K. H., J. Mater. Res. 17 (2002) 1455.Google Scholar
8. Kumagai, M. and Messing, G. L., J. Am. Ceram. Soc. 68, 500 (1985).Google Scholar
9. Wu, A., Salvado, I. M. M., Vilarinho, P. M., and Baptista, J. L., J. Eur. Ceram. Soc. 17, 1443 (1997).Google Scholar
10. Narendar, Y. and Messing, G. L., J. Am. Ceram. Soc. 82, 1659 (1999).Google Scholar
11. Sung, Y-M., Anilkumar, G.M., and Hwang, S-J., J. Mater. Res. 18, 387 (2003).Google Scholar
12. Shimakawa, Y., Kubo, Y., Nakagawa, Y., Kamiyama, T., Asano, H., and Izumi, F., Appl. Phys. Lett. 74, 1904 (1999)Google Scholar