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Amorphous-to-polycrystal transition in GeSbTe thin films

Published online by Cambridge University Press:  01 February 2011

S. Privitera ,
C. Bongiomo ,
E. Rimini ,
R. Zonca ,
A. Pirovano  and
R. Bez
S. Privitera
Affiliation:
Department of Physics and Astronomy, University of Catania, Via Santa Sofia 64, Catania, Italy.
C. Bongiomo
Affiliation:
Istituto di Microelettronica e Microsistemi (IMM), CNR, Stradale Primosole 50, Catania, Italy
E. Rimini
Affiliation:
Department of Physics and Astronomy, University of Catania, Via Santa Sofia 64, Catania, Italy. Istituto di Microelettronica e Microsistemi (IMM), CNR, Stradale Primosole 50, Catania, Italy
R. Zonca
Affiliation:
StMicroelectronics, Central R&D, Via Olivetti 2, Agrate Brianza (MI), Italy
A. Pirovano
Affiliation:
StMicroelectronics, Central R&D, Via Olivetti 2, Agrate Brianza (MI), Italy
R. Bez
Affiliation:
StMicroelectronics, Central R&D, Via Olivetti 2, Agrate Brianza (MI), Italy
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Abstract

The amorphous-to-polycrystal transition has been studied in Ge2+xSb2Te5 (x = 0.0 and 0.5) films through X ray diffraction analysis and in situ electrical measurements. Phase separation has been observed in samples with excess of Ge, which cannot be completely converted into thence phase at temperatures lower than 170 °C.By using in situ transmission electron microscopy, the growth velocity and the nucleation rate in Ge2Sb2Te5 films have been measured at different annealing temperatures. Activation energies of 2.8 eV and 2.4 eV have been obtained for the nucleation rate and the growth velocity, respectively. The barrier energy for the nucleation of a critical nucleus ΔG* has been evaluated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 803: Symposia GG/HH – Advanced Characterization Techniques for Data Storage Materials – Phase Change and Nonmagnetic Materials for Data Storage , 2003 , HH1.4
Copyright
Copyright © Materials Research Society 2004

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References

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