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Aluminum Chemical Vapor Deposition Using Triisobutylaluminum: Mechanism, Kinetics, and Deposition Rates at Steady State

Published online by Cambridge University Press:  25 February 2011

Brian E. Bent ,
Lawrence Dubois II  and
Ralph G. Nuzzo
Lawrence Dubois II
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974.
Ralph G. Nuzzo
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974.
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Abstract

An important step in the chemical vapor deposition (CVD) of aluminum from triisobutylaluminum (TIBA) is the reaction between TIBA (adsorbed from the gas phase) and the growing aluminum surface. We have studied this chemistry by impinging TIBA under collisionless conditions in an ultra-high vacuum system onto single crystal Al(111) and Al(100) substrates. We find that when TIBA (340K) collides with an aluminum surface heated to between 500 and 600K, the aluminum atom is cleanly abstracted from this precursor with near unit reaction probability to deposit, epitaxially, carbon-free aluminum films. The gas phase products are isobutylene and hydrogen. From monolayer thermal desorption experiments, we have determined the kinetic parameters for the rate-determining step, a β-hydride elimination reaction by surface bound isobutyl ligands. Using these kinetic parameters and a Langmuir absorption model, we can predict the rate of aluminum deposition at pressures ranging from 10−6 to 1 Torr.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 327
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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