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Adsorption/Desorption Phenomena in Silicate Glasses: Modeling and Application to a Sub-Micron Bicmos Technology

Published online by Cambridge University Press:  10 February 2011

T. Hoffmann ,
V. Senez  and
P. Leduc
T. Hoffmann
Affiliation:
Department of Process Simulation, IEMN-ISEN, Villeneuve d'Ascq, FRANCEtho@isen.fr
V. Senez
Affiliation:
Department of Process Simulation, IEMN-ISEN, Villeneuve d'Ascq, FRANCEtho@isen.fr
P. Leduc
Affiliation:
Thin Films and Back-End Engineering, PHILIPS Semiconductors, Caen, FRANCE
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Abstract

In this study, we present a numerical model, implemented in our two-dimensional Finite-Element process simulator, allowing the evaluation of the mechanical stress generated by deposited oxides in case of adsorbing or desorbing of water. Using both in-situ and ex-situ measurements of stress, the model parameters (water diffusion, evaporation rate, viscosity) are calibrated. Moisture instability of doped silicate glasses, like borophosphosilicate (BPSG) and phosphosilicate (PSG), is investigated. Moreover, an extension of the present model to simulate the densification of Spin-On-Glass (SOG) will be demonstrated. A failure analysis of a specific structure in an industrial process will validate the capability of the model to evaluate and minimize the risk of cracking in SOG films during densification.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 594: Symposium V – Thin Films - Stresses & Mechanical Properties VIII , 1999 , 415
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Hoffmann, T., Senez, V. and LeDuc, P., J. Vac. Sci. Technol. B 17(6) (1999).Google Scholar
2. Flinn, P.A., Gardner, D.S. and Nix, W.D., IEEE Trans. Electron Dev. ED–34, p. 689 (1987).Google Scholar
3. Ferreira, P., Senez, V. and Baccus, B., IEEE Trans. Electron Dev. ED–43, p. 1525 (1996).Google Scholar
4. Nagasima, N., Suzuki, H. and Nishida, S., J. Eletrochem. Soc. 121, p. 434 (1974).Google Scholar
5. Yoshimaru, M. and Matsuhasi, H., J. Electrochem. Soc. 143, p. 3032 (1996).Google Scholar
6. Zienkiewicz, O.C., The Finite Element Method, McGraw-Hill Ed., p. 52 (1971).Google Scholar
7. Senez, V., Collard, D., Ferreira, P. and Baccus, B., IEDM Tech. Dig., p. 881 (1994).Google Scholar
8. Bornside, D.E., J. Electrochem. Soc. 137, p. 2589 (1990).Google Scholar
9. McInerney, E.J. and Flinn, P.A., IRPS Tech. Dig., p. 264 (1982).Google Scholar
10. Scherer, G.W., J. Non-Cryst. Solids 215, p. 155 (1997).Google Scholar
11. Carlotti, G., Socino, G. and Doucet, L., Appl. Phys. Lett. 66(20), p. 2682 (1995).Google Scholar