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Wet-Chemical Processing of Tin-Doped Indium Oxide Layers

Published online by Cambridge University Press:  21 February 2011

Mark J. Van Bommel ,
Tom N.M. Bernards  and
Wim Talen
Mark J. Van Bommel
Affiliation:
Philips Research Laboratories, Prof. HolstJaan 4, 5656 AA Eindhoven, The Netherlands.
Tom N.M. Bernards
Affiliation:
Philips Research Laboratories, Prof. HolstJaan 4, 5656 AA Eindhoven, The Netherlands.
Wim Talen
Affiliation:
Philips Research Laboratories, Prof. HolstJaan 4, 5656 AA Eindhoven, The Netherlands.
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Abstract

For industrial applications the wet-chemical deposition of tin-doped indium oxide (ITO) layers would be favourable, especially at low temperatures.

It is shown that conductive transparent films can be made by spinning solutions which contain alkoxide precursors of indium and tin. The hydrolysis conditions of these alkoxides are varied using different water to indiumalkoxide ratios and different hydrolysis times. It is shown that when processed at low temperatures, the hydrolysis of these alkoxides has a severe influence on the electrical properties of the layers. A decrease in resistance as a function of time is observed for ITO layers which are stored at room temperature in an ambient atmosphere. Annealing at 350°C in forming gas further reduces the resistance of the ITO layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 346: Symposium N – Better Ceramics Through Chemistry VI , 1994 , 469
Copyright
Copyright © Materials Research Society 1998

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References

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