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Transition Temperatures in Plastic Yielding and Fracture of Semiconductors

Published online by Cambridge University Press:  15 February 2011

P. Pirouz ,
L. P. Kubin ,
J. L. Demenet ,
M. H. Hong  and
A. V. Samant
P. Pirouz
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH, 44106-7204, U.S.A.
L. P. Kubin
Affiliation:
LEM, CNRS-ONERA, B.P. 72, Av. de la Division Leclerc, 92322 Chatillon Cedex, France
J. L. Demenet
Affiliation:
LMP, CNRS, SP2MI, Bd 3, Teleport 2, BP 179, 86960 Futuroscope Cedex, France
M. H. Hong
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH, 44106-7204, U.S.A.
A. V. Samant
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH, 44106-7204, U.S.A.
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Abstract

Recent experiments on deformation of semiconductors show an abrupt change in the variation of the critical resolved shear stress, τy, with temperature, T. This implies a change in the deformation mechanism at a critical temperature Tc. In the cases examined so far in our laboratory and elsewhere, this critical temperature appears to coincide approximately with the brittle-ductile transition temperature, TBDT. In this paper, the deformation experiments performed on the wide bandgap semiconductor, 4H-SiC, over a range of temperatures and strain rates are described together with the characterization of induced dislocations below and above Tc by transmission electron microscopy. Based on these results, and those of Suzuki and coworkers on other compound semiconductors, some understanding of the different mechanisms operating at low and high temperatures in tetrahedrally coordinated materials has been gained, and a new model for their brittle-ductile transition has been proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 578: Symposia A/C – Multiscale Phenomena in Materials - Experiments in Modeling , 1999 , 205
Copyright
Copyright © Materials Research Society 2000

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References

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