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Synthesis of Boron Nitride Film by Ion Beam Deposition

Published online by Cambridge University Press:  16 February 2011

Z. Xia ,
G. L. Zhang  and
W. L. Lin
Z. Xia
Affiliation:
Beijing Institute of Printing, DaXing, Beijing 102600, China
G. L. Zhang
Affiliation:
Beijing Institute of Printing, DaXing, Beijing 102600, China
W. L. Lin
Affiliation:
Institute of Low Energy Nuclear Physics, Beijing Normal University, Beijing 100875, China
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Abstract

Thin films of cubic boron nitride (c-BN) together with hexagonal one (h-BN) have been prepared by using the ion beam deposition method (IBD). Boron was deposited onto silicon wafers by a sputtering beam of 600 eV argon ions, and the growing films were simultaneously irradiated by nitrogen ions at 200 eV. The films were subsequently characterized by infrared absorption (IR) spectroscopy, X-ray photoelectron spectroscopy (XPS) and microhardness measurements. The IR spectra show the evidence of BN layer formation by the absorption peaks at about 1350, 1120 and 810 cm−1, which are in good agreement with those of bulk BN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 315
Copyright
Copyright © Materials Research Society 1991

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References

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