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A Study of Defects in Czochralski-Grown Silicon by Positron Annihilation Spectroscopy
Published online by Cambridge University Press: 03 September 2012
Abstract
We have studied defects in Cz-grown single crystal silicon by utilizing a variable energy positron beam and positron lifetime spectroscopy in conjunction with surface photovoltage measurements. We present results for the depth profile of defects obtained from the Doppler broadening spectra measured by implanting variable energy positrons at different depths ranging from the surface down to ∼ 1 /xm deep. We have also measured positron lifetime spectra at different locations on a wafer and have obtained a radial variation in the density of the vacancy-type defects.
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- Copyright © Materials Research Society 1992
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