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Structure of Chalcogen-Stabilized GaAs Interface

Published online by Cambridge University Press:  25 February 2011

Shinichiro Takatani ,
Asao Nakano ,
Kiyoshi Ogata ,
Takeshi Kikawa  and
Masatoshi Nakazawa
Shinichiro Takatani
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
Asao Nakano
Affiliation:
Production Engineering Research Laboratory, Hitachi Ltd. Yokohama244, Japan
Kiyoshi Ogata
Affiliation:
Production Engineering Research Laboratory, Hitachi Ltd. Yokohama244, Japan
Takeshi Kikawa
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
Masatoshi Nakazawa
Affiliation:
Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
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Abstract

A photo chemical vapor deposited silicon dioxide - gallium arsenide interface treated by a selenium(Se)-molecular beam is investigated using extended X-ray absorption fine structure (EXAFS) analysis. The Se K-edge EXAFS shows the presence of Ga2Se3-related compound at the SiO2/GaAs interface, indicating that the Ga2Se3 layer formed by the Se-treatment is preserved after the deposition of the SiO2film. The effective coordination number of the Se atoms is found to depend on the direction of the polarizing vector with respect to the crystal orientation. An attempt is made to interpret this dependence using a simple atomic layer model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 677
Copyright
Copyright © Materials Research Society 1993

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References

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