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Structural Characterizations of Symmetrically Strained Sim Gen Superlattices

Published online by Cambridge University Press:  28 February 2011

R. C. Bowman Jr. ,
P. M. Adams ,
C. C. Ahn ,
S. J. Chang ,
V. Arbet  and
K. L. Wang
R. C. Bowman Jr.
Affiliation:
Laboratory Operations, The Aerospace Corporation, P. O. Box 92957, Los Angeles, CA 90009
P. M. Adams
Affiliation:
Laboratory Operations, The Aerospace Corporation, P. O. Box 92957, Los Angeles, CA 90009
C. C. Ahn
Affiliation:
W. M. Keck Laboratory, California Institute of Technology, Pasadena, CA 91125
S. J. Chang
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024
V. Arbet
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024
K. L. Wang
Affiliation:
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, CA 90024
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Abstract

Molecular beam epitaxy was used to grow Sim Gen superlattices on relaxed Si1-xGex buffer layers which symmetrize the strains between the heteroepitaxial layers. Samples with different superlattïce periodicities and individual layer thickness ratios were prepared. The compositions and defect structures of the GexSi1-x buffers have significant influence on the homogeneity and quality of the overlying superlattices. In particular, greater disorder was found in superlattice structures grown on Si0.5 Ge0.5 buffers than for those grown on buffer layers with significantly higher or lower Ge contents.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 101
Copyright
Copyright © Materials Research Society 1990

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