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Stable Ohmic Contacts on GaAs and GaN Devices for High Temperatures

Published online by Cambridge University Press:  11 February 2011

A. Piotrowska ,
E. Kaminska ,
A. Barcz ,
K. Golaszewska ,
H. Wrzesinska ,
T. T. Piotrowski ,
E. Dynowska  and
R. Jakiela
A. Piotrowska
Affiliation:
Institute of Electron Technology, Warsaw, Poland
E. Kaminska
Affiliation:
Institute of Electron Technology, Warsaw, Poland
A. Barcz
Affiliation:
Institute of Electron Technology, Warsaw, Poland Institute of Physics, PAS, Warsaw, Poland.
K. Golaszewska
Affiliation:
Institute of Electron Technology, Warsaw, Poland
H. Wrzesinska
Affiliation:
Institute of Electron Technology, Warsaw, Poland
T. T. Piotrowski
Affiliation:
Institute of Electron Technology, Warsaw, Poland
E. Dynowska
Affiliation:
Institute of Physics, PAS, Warsaw, Poland.
R. Jakiela
Affiliation:
Institute of Physics, PAS, Warsaw, Poland.
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Abstract

We have studied thermal stability of Nb and NbN contacts to GaAs and GaN by x-ray diffraction and SIMS, and demonstrated their excellent behaviour under high temperature annealing. GaAs/Nb and GaAs/NbN contacts are stable up to 800°C and 900°C, respectively while GaN/NbN and GaN/Nb/NbN remain stable up to 1000°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L11.57
Copyright
Copyright © Materials Research Society 2003

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References

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