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Reduced Time for Uniform Etching of Cu Power Planes during FIB Editing

Published online by Cambridge University Press:  01 February 2011

V.V. Makarov ,
W.B. Thompson  and
T.R. Lundquist
V.V. Makarov
Affiliation:
NPTest, Inc, 150 Baytech Drive San Jose, CA 95134, USA
W.B. Thompson
Affiliation:
NPTest, Inc, 150 Baytech Drive San Jose, CA 95134, USA
T.R. Lundquist
Affiliation:
NPTest, Inc, 150 Baytech Drive San Jose, CA 95134, USA
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Abstract

Dry etching of Cu challenges the Focused Ion Beam (FIB) removal of metallizations. Cu metallizations are comprised of numerous, randomly orientated crystallites. Each orientation shows a different etch rate under ion bombardment, leading to unacceptable damage to underlying dielectric. An improved methodology for uniform Cu etching over dielectric consists of three steps: 1) Exposure, 2) Initial off-normal bombardment and 3) Chemistry assisted ion bombardment. Comparison is made with and without preliminary off-normal bombardment. It is shown that Cu etching preceded by off-normal bombardment was completed ∼50% sooner with decreased dielectric over-etch.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E3.10
Copyright
Copyright © Materials Research Society 2003

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References

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