Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-12-04T20:07:34.205Z Has data issue: false hasContentIssue false

Real Structure and Internal Friction of Boron Doped with Zirconium

Published online by Cambridge University Press:  25 February 2011

G. Sh. Darsavelidze
Affiliation:
Institute of Metallurgy, Academy of Sciences of the Georgian SSR, Tbilisi 380042, Georgia, USSR
G. V. Tsagareishvili
Affiliation:
Institute of Metallurgy, Academy of Sciences of the Georgian SSR, Tbilisi 380042, Georgia, USSR
M. E. Antadze
Affiliation:
Institute of Metallurgy, Academy of Sciences of the Georgian SSR, Tbilisi 380042, Georgia, USSR
O. A. Tsagareishvili
Affiliation:
Institute of Metallurgy, Academy of Sciences of the Georgian SSR, Tbilisi 380042, Georgia, USSR
A. G. Khvedelidze
Affiliation:
Institute of Metallurgy, Academy of Sciences of the Georgian SSR, Tbilisi 380042, Georgia, USSR
F. N. Tavadze
Affiliation:
Institute of Metallurgy, Academy of Sciences of the Georgian SSR, Tbilisi 380042, Georgia, USSR
Get access

Abstract

The nature of interaction of point and linear defects in semiconductor boron doped with zirconium (∼ 1.5% at.) has been studied using electron microscope and internal friction methods. It was shown that doping with zirconium promoted the multiplication of polysynthetic twins and stacking faults. A computer simulated analysis of diffraction patterns was performed in terms of trigonal presentation. At the frequency of free torsional vibrations of ∼ 1Hz a high level of internal friction with maxima at 250, 300–320 and 380–420°C was revealed. It is supposed that the maxima are respectively due to: the twin-boundary motion accompanied by breaking of intericosahedral bonds (a); the process of ordering-disordering of atoms in the impurity atmospheres under the continuous change of the temperature and elastic fields of moving twinning dislocations in the {100} system (b); the impurity controlled twin-boundary motion in the {511} system.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tsagareishvili, G.V., Tavadze, F.N., G.Sh. Darsavelidze, V.Sh. Metreveli, in Boron, Preparation and Properties, Proc.Int. Symp. on Boron, Warsaw 1968, edited by Niemyski, T. (PWN – Polish Scientific Publishers, Warszawa 1970) pp. 281290; G.V. Tsagareishvili, F.N. Tavadze, A.G. Khvedelidze, D.L. Gabunia, in Boron, Preparation and Properties, Proc.Int. Symp. on Boron, Warsaw 1968, edited by T.Niemyski (PWN - Polish Scientific Publishers, Warszawa 1970), pp. 295–299.Google Scholar
2. G.Sh. Darsavelidze, Tsagareishvili, O.A., Khvedelidze, A.G., Tsikaridze, D.N., in Vnutrennee trenie i tonkoe stroenie metallov i neorganicheskikh materialov, Proc. Sov. Meet. on Mech. of Int. Friction in Solids, Kutaisi 1982, edited by Tavadze, F.N. (Nauka, Moscow 1985) pp. 213217.Google Scholar
3. Kleinhenz, K., Runow, P., J. Phys. Stat. Sol., 29 (2), 627637 (1966); M. Suezawa, K. Sumino, J. Phys. Stat. Sol.,16:, 263–268 (1976)Google Scholar
4. Antadze, M.E., Rojanski, V.N., Tsagareishvili, G.V., Tavadze, F.N., in Bor poluchenie, struktura i svoistva,Proc. IY Int. Symp. on Boron, Tbilisi 1972, edited by Tavadze, F.N. (Nauka, Moscow 1974) pp. 5458.Google Scholar
5. McKelvy, M.J., Smith, Rea A.R., Euring, L., J. Sol. St. Chem. 44 (3) 374377 (1982).Google Scholar
6. Darsavelidze, G.Sh., Tsagareishvili, O.A., Eterashvili, T.V., Metreveli, V.Sh., Tavadze, G.F., Khomeriki, D.J., J. Less Common Metals, 117, 189193 (1986); G.V. Tsagareishvili, T.G. Nakashidze, J.Sh. Jobava, G.P. Lomidze, D.E. Khulelidze, D.Sh. Tsagareishvili, O.A. Tsagareishvili, J. Less Common Metals, 117, 159–161 (1986).Google Scholar
7. Runow, P., Ji, Mater. Sci., 7, 499511 (1972).Google Scholar