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Rapid Thermal Annealing of Si+ and P+ Dually Implanted InP

Published online by Cambridge University Press:  25 February 2011

Shen Honglie ,
Yang Genqing ,
Zhou Zuyao  and
Zou Shichang
Shen Honglie
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Yang Genqing
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Zhou Zuyao
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Zou Shichang
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
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Abstract

150keV Si* ions and 160keV P* ions were implanted at 200°C with doses ranging from 5x1013 to 1x1015/cm2 to study the effect of dual implantations on the electrical properties of Fe doped InP. Samples encapsulated with Si3N4 films of about 1000Å were annealed in a halogen tungsten lamp RTA system under flowing N2 at different temperatures from 700 to 900°C for 5s. It has been found that Si*+P* dual implantations into InP can result in an enhanced activation, particularly significant at high dose of implantation. The maximum dopant activation and average electron mobility for Si*+P* dual implants at a dose of 1×1015/cm2 are 70% and 750cm2/vs, which corresponds to a peak electron concentration of 5×1019/cm3 while that for Si* single implant at the same dose are 29% and 870cm2/vs, which corresponds to a peak electron concentration of 1.2×10 19/cm3. The improvement of the electrical properties is discussed in terms of amphoteric behavior of silicon in InP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 715
Copyright
Copyright © Materials Research Society 1990

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References

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