Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-19T09:24:47.144Z Has data issue: false hasContentIssue false
  • English
  • Français

Photoemitters Based on Glass - ITO Structures

Published online by Cambridge University Press:  10 February 2011

J. Olesik
J. Olesik*
Affiliation:
Institute of Physics, Pedagogical University of Czestochowa, Al. Armii Krajowej 13/15, 42–201 Czqstochowa, Poland
Get access

Abstract

The sample was a silicon glass with conducting films (ITO) evaporated by reactive ion sputtering on its both sides. The internal electric field was created by applying a negative polarizing voltage Upol, to field electrode. The investigations were performed in the vacuum of the order 10−6 Pa. As a result of applying Upol and illumination, photoelectrons are released and enter electron multiplier. The electrons create voltage pulses in the multiplier which are recorded in the multichannel pulse amplitude analyzer. The amplitude spectra were measured for unilluminated samples and illuminated by a quartz lamp.

Energy analysis of emitted electrons was performed by the retarding field method. Measurements of electrons energy in field induced emission showed that about 80% o electrons have energy up to 10 eV but some electrons of higher energy are also detected. The described effects can be modeled with support of the electron effects occurring during the intrinsic discharges in gases. Theoretical molecular dynamics simulations have shown that SnO4 tetrahedral interacting with SiO4 clusters of the glass substrate play central role in the observed nonlinear photoinduced changes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 291
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Malter, L., Phys. Rev. 49, 478(1936).Google Scholar
2. Jacobs, H., Phys. Rev. 84, 877(1951).Google Scholar
3. Seiler, H., El. Beam. Intern. With Solid, 1982, 33.Google Scholar
4. Olesik, J. and Calusiński, B., Thin Solid Films 238, 271(1994).Google Scholar
5. Ibach, H., Phys. Rev. 27, N0 5, (1971).Google Scholar
6. Iakoubovskii, K., Hertogen, P.W. and Adriaenssens, G.J., Non-Cryst, J.. Solids 240, 237(1998).Google Scholar
7. Adriaenssens, G.J., Tikhomirov, V. and Elliott, S.R., J. Non-Cryst. Solids 227–230, 688 (1998).Google Scholar
8. Zakrzewska, K. and Leja, E., Vacuum 36, 485(1986).Google Scholar
9. Leja, E., Otrzymywanie i wlaściwości elektryczne przezroczystych warstw tlenkowych typu SnO2 i In2O3, Zeszyty Naukowe 55, AGH Kraków (1982).Google Scholar
10. Wasylak, J., Kucharski, J., Kityk, I.V. and Sahraoui, B., Journ. of Appl. Phys. 85, 425(1999).Google Scholar
11. Olesik, Z., Kityk, I.V., Kasperczyk, J., Olesik, J. and Mefleh, A., Thin Solid Films 354, 1–8 (1999).Google Scholar
12. Olesik, J., Calusiński, B. and Olesik, Z., SPIE 2877, 198(1996).Google Scholar
13. Olesik, J., Malachowski, M., Olesik, Z., SPIE 3743, 203(1999).Google Scholar
14. Bronsztein, I.M. and Fraiman, B.S., Secondary Electron Emission, (Nauka, Moscow 1969), p. 407.Google Scholar