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Optical Properties of Random Multilayers of Amorphous A-Si:H/A-Si3N4+x:H and the Classical Localization

Published online by Cambridge University Press:  21 February 2011

Shoji Nitta ,
Kohji Ogawa ,
Takehiro Furukawa ,
Takashi Itoh  and
Shuichi Nonomura
Shoji Nitta
Affiliation:
Department of Electronic and Computer Engineering, Gifu University, 1–1 Yanaido, Gifu 501–11, Japan
Kohji Ogawa
Affiliation:
Department of Electronic and Computer Engineering, Gifu University, 1–1 Yanaido, Gifu 501–11, Japan
Takehiro Furukawa
Affiliation:
Department of Electronic and Computer Engineering, Gifu University, 1–1 Yanaido, Gifu 501–11, Japan
Takashi Itoh
Affiliation:
Department of Electronic and Computer Engineering, Gifu University, 1–1 Yanaido, Gifu 501–11, Japan
Shuichi Nonomura
Affiliation:
Department of Electronic and Computer Engineering, Gifu University, 1–1 Yanaido, Gifu 501–11, Japan
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Abstract

In the optical reflectance spectrum of the random multilayers of a-Si:H/a-Si3N4+x:H, it is observed an anomalous peak which is explained by the classical localization of light propagation. The following two subjects are discussed in this report; (a). The Kramers-Kronig transformation is done including the anomalous disorder-related reflectance peak. Extra absorption coefficients Δα are obtained by this analysis. Energy dependence of the localization length 1(hv) of light propagation are obtained by 1(hv)=1/Δα(hv). (b). The other is the experiment on scaling where the ratio of the disorder and the average layer thickness is kept constant but the size of each layer is changed in each experiment

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 831
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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