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A New Oxygen Plasma Source for In-Situ Thin Films Growth of DY1BA2CU3O7-x by Molecular Beam Epitaxy
Published online by Cambridge University Press: 28 February 2011
Abstract
We describe an atomic oxygen source based on a D.C. plasma discharge, compatible with cristal growth in a Molecular Beam Epitaxy(M.B.E.) system. The physical characteristics of the oxygen cell are presented. The efficiency of the cell has been proved by direct deposition of CuO at high temperature(500°C). Moreover, we used successfully this cell for direct epitaxial growth of high temperature superconductors, with an ambient pressure as low as 2 10-5 Torr.
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- Copyright © Materials Research Society 1990
References
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