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A New Oxygen Plasma Source for In-Situ Thin Films Growth of DY1BA2CU3O7-x by Molecular Beam Epitaxy

Published online by Cambridge University Press:  28 February 2011

M. Touzeau
Affiliation:
LPGP Université Paris Sud/91405 ORSAY Cedex/France
A. Schuhl
Affiliation:
Thomson CSF-LCR Domaine de Corbeville/91404 ORSAY Cedex/France
R. Cabanel
Affiliation:
Thomson CSF-LCR Domaine de Corbeville/91404 ORSAY Cedex/France
P. Luzeau
Affiliation:
ISA-Riber 133 Bd. National/92503 REUIL MALMAISON/France
A. Barski
Affiliation:
ISA-Riber 133 Bd. National/92503 REUIL MALMAISON/France
D. Pagnon
Affiliation:
LPGP Université Paris Sud/91405 ORSAY Cedex/France
J.P. Hirtz
Affiliation:
Thomson CSF-LCR Domaine de Corbeville/91404 ORSAY Cedex/France
G. Creuzet
Affiliation:
Thomson CSF-LCR Domaine de Corbeville/91404 ORSAY Cedex/France
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Abstract

We describe an atomic oxygen source based on a D.C. plasma discharge, compatible with cristal growth in a Molecular Beam Epitaxy(M.B.E.) system. The physical characteristics of the oxygen cell are presented. The efficiency of the cell has been proved by direct deposition of CuO at high temperature(500°C). Moreover, we used successfully this cell for direct epitaxial growth of high temperature superconductors, with an ambient pressure as low as 2 10-5 Torr.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

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