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A new model of imprint mechanism in ferroelectric memory

Published online by Cambridge University Press:  26 February 2011

Hiromu Miyazawa
Affiliation:
miyazawa.hiromu@exc.epson.co.jp, TECHNOLOGY PLATFORM RESEARCH CENTER, EPSON, FUJIMI281, FUJIMI-MACHI, NAGANO-KEN, 399-0293, Japan, 81-266-62-9532, 81-266-52-8998
Yasuaki Hamada
Affiliation:
hamada.yasuaki@exc.epson.co.jp, TECHNOLOGY PLATFORM RESEARCH CENTER, EPSON, Japan
Takamitsu Higuchi
Affiliation:
higuchi.takamitsu@exc.epson.co.jp, TECHNOLOGY PLATFORM RESEARCH CENTER, EPSON, Japan
Eiji Natori
Affiliation:
natori.eiji@exc.epson.co.jp, TECHNOLOGY PLATFORM RESEARCH CENTER, EPSON, Japan
Takeshi Kijima
Affiliation:
kijima.takeshi@exc.epson.co.jp, TECHNOLOGY PLATFORM RESEARCH CENTER, EPSON, Japan
Tatsuya Shimoda
Affiliation:
shimoda.tatsuya@exc.epson.co.jp, TECHNOLOGY PLATFORM RESEARCH CENTER, EPSON, Japan
Masato Yoshiya
Affiliation:
yoshiya@ams.eng.osaka-u.ac.jp, ADAPTIVE MACHINE SYSTEMS, OSAKA UNIVERSITY, Japan
Tamio Oguchi
Affiliation:
oguchi@hiroshima-u.ac.jp, ADSM, HIROSHIMA UNIVERSITY, Japan
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Abstract

We have studied imprint mechanism of ferroelectric memory based on the oxygen-vacancy screening model. Interface charge density and offset bias for PZT resulted from the imprint were estimated as a function of effective depth for diffusion of oxygen vacancy based on this model. In order to understand microscopic dynamics during the imprint that might affect the interface charge density, molecular dynamics simulation (MD) was carried out. Diffusion length during the real imprint test for PZT was estimated based on the diffusion constant obtained from the MD simulation. By using the diffusion length, interface charge density and, in turn, offset bias was quantitatively estimated. Based on the quantitative analysis, it is found that the oxygen-vacancy screening model with microscopic dynamics obtained from the simulation explains well the imprint mechanism for PZT materials family.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

1 Sadashivan, S., Aggarwal, S., Song, T. K., Ramesh, R., Evans, J. T. Jr., Tuttle, B. A., Warren, W. L., and Dimos, D. : J. Appl. Phys. 83 (1998) 2165.CrossRefGoogle Scholar
2 Kijima, T., Aoyama, T., Miyazawa, H., Hamada, Y., Ohashi, K., Nakayama, M., Natori, E. and Shimoda, T.: Jpn. J. Appl. Phys. 44 No. 1A (2005) 267.CrossRefGoogle Scholar
3 Grossmann, M., Lohse, O., Bolten, D., Boettger, U., Schneller, T. and Waser, R. : J. Appl. Phys. 92(2002) 2680.CrossRefGoogle Scholar
4 Stolichnov, I., Tagantsev, A. K., Setter, N. and Cross, J. S., Proc. ISIF 2004, 8-14-CGoogle Scholar
5 Okamura, S. and Shiosaki, T. : Ext. Abstr. (65th Autumn Meet. 2004); Japan Society of Applied Physics, 3p-Y-3Google Scholar
6 Miyazawa, H., Higuchi, T., Aoyama, T., Kijima, T., Natori, E., Shimoda, T. and Oguchi, T., Ferroelectric Thin Films XII, Mater. Res. Soc. Symp. Proc. 784 (2004) 67.Google Scholar
7 Arlt, G. and Neumann, H., Ferroelectrics, 87 (1988) 109.CrossRefGoogle Scholar
8 Hamada, Y. (private communication)Google Scholar
9 Cherry, M., Islam, M. S. and Catlow, C. R. A., J. Solid State Chem, 118 (1995) 125.CrossRefGoogle Scholar

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