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Magneto-Transport Measurements on Si/Si1−xGex Resonant Tunneling Structures

Published online by Cambridge University Press:  22 February 2011

Ulf Gennser ,
V. P Kesan ,
D. A. Syphers ,
T. P. Smith III ,
S. S Iyer  and
E. S. Yang
Ulf Gennser
Affiliation:
Microelectronics Science Laboratories, Columbia University New York, NY 10027.
V. P Kesan
Affiliation:
IBM Research Division, T. J. Watson Research Center Yorktown Heights, NY 10598.
D. A. Syphers
Affiliation:
Physics Department, Bowdoin College, Brunswick, ME 04011.
T. P. Smith III
Affiliation:
IBM Research Division, T. J. Watson Research Center Yorktown Heights, NY 10598.
S. S Iyer
Affiliation:
IBM Research Division, T. J. Watson Research Center Yorktown Heights, NY 10598.
E. S. Yang
Affiliation:
Microelectronics Science Laboratories, Columbia University New York, NY 10027.
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Abstract

We have investigated magneto-transport properties of differently strained Si/ Si1−xGex resonant tunneling devices. The built-in strain was either put in the Si layers, by means of a thick., relaxed Si1−xGex buffer layer, or in the Si1−xGex layers, in which case all Si1−xGex layers were grown below the critical thickness, and a Si1−xGex spacer layer with graded Ge content was used. Magnetic fields parallel to the interface have been employed to probe the in-plane dispersion in the quantum well. This is used to study the effect of band-mixing in the two strain configurations. A field perpendicular to the interface resolves some Landau level splitting. Most strikingly, however, is the similarity in the spectra with the case when the magnetic field is applied parallel to the interfaces. This indicates broadening of the levels, possibly due to scattering, and the importance of 3-dimensional band structure effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 397
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Liu, H. C., Landheer, D., Buchanan, M., Kechang, S., Houghton, D. C., and Diorio, M., Superlatt. Microstr., 5, 213 (1989).CrossRefGoogle Scholar
2. Wang, K. L., Park, J., Rhee, S. S., Karunasiri, R. P., and Chern, C. H., Superlatt. Microstr., 5, 201 (1989).Google Scholar
3. Gennser, U., Kesan, V. P., Iyer, S. S., Bucelot, T. J., and Yang, E. S., J. Vac. Sci. Tecnol. B, 8, 210 (1990).Google Scholar
4. Schuberth, G., Abstreiter, G., Gornik, E., Schäffler, F., and Luy, J. F., Phys. Rev. B, 43, 2280 (1991)CrossRefGoogle Scholar
5. Hayden, R. K., Maude, D. K., Eaves, L., Valadares, E. C., Henini, M., Sheard, F. W., Hughes, O. H., Portal, J. C., and Cury, L., Phys. Rev. Lett., 66, 1749 (1991).Google Scholar
6. Ben Amor, S., Martin, K. P., Rascol, J. J. L., Higgins, R. J., Torabi, A., Harris, H. M., and Summers, C. J., Appl. Phys. Lett., 53, 2540 (1988).Google Scholar
7. Mendez, E. E., Esaki, L., and Wang, W. I., Phys. Rev. B, 33, 2893 (1986).Google Scholar
8. Zawadzki, W., Semicond. Sci. Techn., 2, 550 (1987).CrossRefGoogle Scholar