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Low Temperature Crystallization of Bismuth Layer-Structured Ferroelectric Thin Films Using Lead Titanate Sol-Gel Templating Technique and Their Electrical Properties

Published online by Cambridge University Press:  01 February 2011

Junichi Karasawa
Affiliation:
F-group, Technology Platform Research Center, Seiko Epson Corporation 281 Fujimi, Fujimi-machi, Nagano-ken, 399–0293, Japan
Takeshi Kijima
Affiliation:
F-group, Technology Platform Research Center, Seiko Epson Corporation 281 Fujimi, Fujimi-machi, Nagano-ken, 399–0293, Japan
Eiji Natori
Affiliation:
F-group, Technology Platform Research Center, Seiko Epson Corporation 281 Fujimi, Fujimi-machi, Nagano-ken, 399–0293, Japan
Tatsuya Shimoda
Affiliation:
F-group, Technology Platform Research Center, Seiko Epson Corporation 281 Fujimi, Fujimi-machi, Nagano-ken, 399–0293, Japan
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Abstract

The crystal structure and electrical properties of lead titanate (PbTiO3: PT) sol-gel network templated bismuth layer-structured ferroelectric (BLSF) thin films were systematically investigated as a function of the doping amount of lead titanate sol-gel solution and annealing temperature. The starting solutions of lead titanate sol-gel templated BLSF were prepared by adding lead titanate sol-gel solution to BLSF solutions such as strontium bismuth tantalate (SrBi2Ta2O9: SBT), bismuth titanate (Bi4Ti3O12: BiT) and lanthanum-doped bismuth titanate ((Bi,La)4Ti3O12: BLT). These solutions were spin-coated on platinized silicon wafers and pyrolized on a hot plate, then crystallized at 550°C – 738°C by RTA (Rapid Thermal Annealing). The crystallized films with sputtered platinum top electrodes were post-annealed for electrical property measurements. In the case of SBT-PT, it was found that the added lead titanate so-gel network has no remarkable effect on lowering the BLSF (m=2) crystallization temperature but rather enhances the pyrochlore phase. In the case of BiT-PT, the bismuth layered-structure was confirmed at the temperature down to 550°C as the amount of lead titanate sol-gel network is increased. The major layered-structure, however, was not desired m=3, but unexpected m (e.g m=4 or higher). In the case of BLT-PT, lowering the BLSF (m=3) crystallization temperature down to 638°C was finally achieved within proper amount of lead titanate sol-gel network without drastic drop of ferroelectricity. A 2Pr of 32 μC/cm2 was obtained in 0.96BLT-0.04PT thin film.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

[1] Park, Yong-il, Miyayama, Masaru and Kudo, Tetsuichi, J. Ceram. Soc. Jpn., 107, 413418 (1999)CrossRefGoogle Scholar
[2] Kijima, T. and Ishiwara, H., Jpn. J. Appl. Phys., Vol. 41, Part 2, L716 (2002)CrossRefGoogle Scholar

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Low Temperature Crystallization of Bismuth Layer-Structured Ferroelectric Thin Films Using Lead Titanate Sol-Gel Templating Technique and Their Electrical Properties
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