Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-16T14:52:42.483Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Energy Fluoroboron Ion Beam Interaction with Silicon Single Crystals

Published online by Cambridge University Press:  25 February 2011

L. J. Huang ,
W. M. Lau ,
I. V. Mitchell  and
S.-T. Lee
L. J. Huang
Affiliation:
Surface Science Western, University of Western Ontario, London, Ontario, Canada N6A 5B7
W. M. Lau
Affiliation:
Surface Science Western, University of Western Ontario, London, Ontario, Canada N6A 5B7
I. V. Mitchell
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario, Canada N6A 3K7
S.-T. Lee
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650–2132
Get access

Abstract

Fluoroboron (BF2+) ion implantation into silicon is frequently used for fabrication of shallow junctions. For scaling down of the junction dimensions, one of the efficient approaches is to lower the implantation energy. This work reports fluoroboron ion interactions with (100) oriented silicon at 10 to 500 eV ion energy. Ion bombardment was carried out using a mass-separated BF2+ ion beam in an ultrahigh vacuum low energy ion beam system. The temperature of the silicon crystal during bombardment was kept either at room temperature or 500°C. The reactions (both etching and incorporation) were characterized by x-ray photoemission spectroscopy (XPS), Rutherford backscattering (RBS) and Raman scattering. The results show that BF2+ ions dissociated on the silicon surface at an energy as low as 10 eV and most of fluorine segregated to the surface and desorbed. Both the physical and chemical etching rate of the beam were energy dependent but much lower than the accumulation rate. For beam fluences higher than 1 × 1018/cm2, continuous amorphous boron films were deposited on silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 625
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. See, for example, Osburn, C. M., J. Electronic Materials, 19, 67(1990).Google Scholar
2. Brotherton, S. D., Gowers, J. P., Young, N. D., Clegg, J. B. and Ayres, J. R., J. Appl Phys. 60, 3567(1986).Google Scholar
3. Ozturk, M. C., Wortman, J. J., and Fair, R. B., Appl Phys. Lett. 52, 963(1988).CrossRefGoogle Scholar
4. Wu, I-W., Fulks, R. T., and Mikkelsen, J. C., Phys. Rev. B60, 2422(1986).Google Scholar
5. Ohyu, K., Itoga, T. and Natsuaki, N., Jpn. J. Appl Phys. 29, 457(1990).Google Scholar
6. Ozturk, M. C., Wortman, J. J., Fair, R. B., Appl Phys. Lett. 52, 963(1988).CrossRefGoogle Scholar
7. Tachi, S. and Miyake, K., in Semiconductor Technologies, edited by Nishizawa, J. (North-Holland, Amsterdam, 1984), p. 341.Google Scholar
8. Tachi, S. and Okudaira, S., J. Vac. Sci. Tech. B4, 459(1986).CrossRefGoogle Scholar
9. Lau, W. M., Feng, X., Bello, I., Sant, S., Fooand, K. K., Lawson, R. P. W., Nucl. Instrum. Methods B59/60, 316(1991).Google Scholar
10. For the cleaning process, see Huang, L. J. and Lau, W. M., Appl Phys. Lett. 60, 1108(1992).Google Scholar
11. Lide, D. R. ed., Handbook of Chemistry and Physics, (CRC Press, Boston, 1991).Google Scholar
12. Lau, K. H. and Hildenbrand, D. L., J. Chem. Ohys. 72, 4928(1980).Google Scholar
13. Yaromoff, J. A. and McFeely, F. R., Surf. Sci. 184, 389(1987).Google Scholar