Hostname: page-component-7bb8b95d7b-w7rtg Total loading time: 0 Render date: 2024-09-14T03:17:50.756Z Has data issue: false hasContentIssue false
  • English
  • Français

Light-Induced Degradation of a-Si:H - A Comparison of Short-Laser-Pulse and Steady Light Degradation

Published online by Cambridge University Press:  15 February 2011

P. Tzanetakis ,
N. Kopidakis ,
M. Androulidakp ,
C. Kalpouzos ,
P. Stradins  and
H. Fritzsche
P. Tzanetakis
Affiliation:
Institute of Electronic Structure and Laser, FORTH, Heraklion, Greece
N. Kopidakis
Affiliation:
Institute of Electronic Structure and Laser, FORTH, Heraklion, Greece
M. Androulidakp
Affiliation:
Institute of Electronic Structure and Laser, FORTH, Heraklion, Greece
C. Kalpouzos
Affiliation:
Institute of Electronic Structure and Laser, FORTH, Heraklion, Greece
P. Stradins
Affiliation:
James Franck Institute, University of Chicago, Chicago, IL 60637
H. Fritzsche
Affiliation:
James Franck Institute, University of Chicago, Chicago, IL 60637
Get access

Abstract

An undoped and a compensated a-Si:H sample have been degraded by 17–34 ns laser pulses and by steady light (CW) at 78K and 300K. The light-induced defect concentration N is monitored by the increase in subgap absorption a. For the same change in a pulses degrade the photoconductivity σp more than CW light and more strongly for exposures at 78K than at 300K. The lack of correlation between σp and N suggests that light soaking causes additional damage besides an increase in N. This additional effect is more pronounced for pulse and low temperature exposures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 245
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Stutzmann, M., Nunnekamp, J., Brandt, M. S. and Asano, A., Phys. Rev. Lett. 67, 2347 (1991).Google Scholar
2. Stutzmann, M., Jackson, W. B. and Tsai, C. C., Phys. Rev. B32, 23 (1985).Google Scholar
3. Hata, N., Ganguly, G. and Matsuda, A., Appl. Phys. Lett. 62, 1791 (1993).Google Scholar
4. Hata, N., Ganguly, G., Wagner, S. and Matsuda, A., Appl. Phys. Lett. 61, 1817 (1992).Google Scholar
5. Meaudre, R., Vignoli, S., Meaudre, M. and Chanel, L., Philos. Mag. Lett. 68, 159 (1993).Google Scholar
6. Stradins, P., Tran, M. Q. and Fritzsche, H., J. Non-Cryst. Solids, 164–166, 175 (1993).Google Scholar
7. Tzanetakis, P., Fritzsche, H., Tran, M. Q., Androulidaki, M. and Rynes, E., J. Non-Cryst. Solids, 164–166, 607 (1993).Google Scholar
8. Stradins, P. and Fritzsche, H., Philos. Mag. B 69, 121 (1994).Google Scholar
9. Fritzsche, H., Solid State Comm. 94, 953 (1995).Google Scholar
10. Stradins, P., Fritzsche, H. and Tran, M. Q., Mat. Res. Soc. Symp. Proc. 336, 227 (1994).Google Scholar
11. Vignoli, S., Meaudre, R., Meaudre, M., Chanel, L. and Roca i Cabarrocas, P., J. Non-Cryst. Solids. 164–166, 191 (1993).Google Scholar