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IV-VI on Fluoride/Si Structures for IR-Sensor Array Applications

Published online by Cambridge University Press:  15 February 2011

A. Fach
Affiliation:
AFIF at Swiss Federal Institute of Technology, Technopark ETH-Teil, Pfingstweidstr. 30, CH-8005 Zürich, Switzerland
C. Maissen
Affiliation:
AFIF at Swiss Federal Institute of Technology, Technopark ETH-Teil, Pfingstweidstr. 30, CH-8005 Zürich, Switzerland
J. Masek
Affiliation:
AFIF at Swiss Federal Institute of Technology, Technopark ETH-Teil, Pfingstweidstr. 30, CH-8005 Zürich, Switzerland
S. Teodoropol
Affiliation:
AFIF at Swiss Federal Institute of Technology, Technopark ETH-Teil, Pfingstweidstr. 30, CH-8005 Zürich, Switzerland
H. Zogg
Affiliation:
AFIF at Swiss Federal Institute of Technology, Technopark ETH-Teil, Pfingstweidstr. 30, CH-8005 Zürich, Switzerland
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Abstract

Epitaxial narrow gap IV-VI layers on Si-substrates offer an alternate to Hg1−xCdxTe for IR-focal plane arrays with similar ultimate sensitivities. We report on the following improvements in reaching the goal of an easily producible fully monolithic IV-VI-on-active-Si IRFPA: (1) Up to now, compatibility with the Si-substrate was reached through use of a stacked CaF2/BaF2 buffer layer. This layer is replaced by a very thin CaF2 buffer only, which is more suitable for photolithographic processing. (2) Fine resolution wet etching of the IV-VI layers is much easier and reproducible with this new type of buffer. (3) Good homogeneity of cut-off wavelengths is obtained: For a 12 mm long linear Pb1−xSnxSe array with 10.2 μm cut-off wavelength at 95K, the variation in cut-off is smaller than 0.1 μm. (4) The thermal mismatch strain relaxes by dislocation glide even at cryogenic temperatures and after many thermal cycles.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

[1] Zanio, K., Mattson, R., Chu, M., Terterian, S., SPIE Vol.1683, 1992, 179.Google Scholar
[2] Masek, J., Hoshino, T., Maissen, C., Zogg, H., Blunier, S., SPIE Vol.1735, 1992, 54.Google Scholar
[3] Zogg, H., Maissen, C., Masek, J., Hoshino, T., Blunier, S., Tiwari, A.N., Semicond. Sci. Technol. 6, C36, 1991.Google Scholar
[4] Zogg, H., Maissen, C., Masek, J., Hoshino, T., Blunier, S., Mat. Res. Soc. Symp. Proc. 216, 373, 1991.CrossRefGoogle Scholar
[5] Holloway, H., Logothetis, E.M., Wilkes, E., Appl. Phys. Lett. 21, 318, 1971.Google Scholar
[6] Holloway, H., Physics of Thin Films, Academic Press, Vol.11, p. 105.Google Scholar
[7] CRC Handbook of Physics and ChemistryGoogle Scholar
[8] Schowalter, L.J., Fathauer, R.W., CRC Crit. Rev. Solid State Mat. Sci. 15, 367, 1989.CrossRefGoogle Scholar
[9] Blunier, S., Zogg, H., Maissen, C., Tiwari, A.N., Overnay, R.M., Haefle, H., Buffat, P.A., Kostorz, G., Phys. Rev. Lett. 68, 3599, 1992.Google Scholar
[10] Maissen, C., Zogg, H., Blunier, S., Sultan, A., Teodoropol, S., Richmond, T., Tomm, J.W., Kostorz, G., Mat. Res. Soc. Symp. Proc. 263, 415, 1992.Google Scholar