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In-Situ Reflectance Measurements of Measurements of During Ion Implantation

Published online by Cambridge University Press:  21 February 2011

Pieter L. Swart ,
Bea M. Lacquet  and
Michael F. Grobler
Pieter L. Swart
Affiliation:
Sensors Sources and Signal Processing Research Group, Faculty of Engineering, Rand Afrikaans University, Johannesburg 2000
Bea M. Lacquet
Affiliation:
Sensors Sources and Signal Processing Research Group, Faculty of Engineering, Rand Afrikaans University, Johannesburg 2000
Michael F. Grobler
Affiliation:
Sensors Sources and Signal Processing Research Group, Faculty of Engineering, Rand Afrikaans University, Johannesburg 2000
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Abstract

Damage introduced during ion implantation of semiconductor materials coalesce at a certain critical dose, for a particular energy and ion species. After this threshold dose rapid changes occur in the reflectance. This may be used for studying the amorphization process, or it may be applied as a non--destructive dosimeter and uniformity tool.

An automated reflectometer was developed for studying reflectance during ion implantation of semiconductors with various ion species. Results on argon and phosphorous implants into silicon at energies ranging from 50 to 240 keV are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 119
Copyright
Copyright © Materials Research Society 1989

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