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Infrared Luminescence from MOCVD Gan

Published online by Cambridge University Press:  21 February 2011

M. W. Leksono ,
C. H. Oiu ,
W. Melton  and
J. I. Pankove
M. W. Leksono
Affiliation:
Department of Electrical and Computer Engineering, University of Colorado, Boulder, CO 80309–0425
C. H. Oiu
Affiliation:
Department of Electrical and Computer Engineering, University of Colorado, Boulder, CO 80309–0425
W. Melton
Affiliation:
Department of Electrical and Computer Engineering, University of Colorado, Boulder, CO 80309–0425
J. I. Pankove
Affiliation:
Department of Electrical and Computer Engineering, University of Colorado, Boulder, CO 80309–0425
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Abstract

An infrared emission peak at 1.25 eV is observed from a GaN film which exhibits strong yellow luminescence peaking at 2.15 eV. It is most efficient at a temperature of 160 K. The full width at half maximum (FWHM) of the IR peak is 0.17±0.01 eV, which is about 1/3 that of the yellow peak.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 559
Copyright
Copyright © Materials Research Society 1994

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References

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