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The Influence of Deposition Conditions on the Properties of a-Sic:H Thin Films

Published online by Cambridge University Press:  25 February 2011

L. Magafas ,
D. Girginoudi ,
N. Georgoulas  and
A. Thanailakis
L. Magafas
Affiliation:
Laboratory of Electrical and Electronic Materials Technology, Department of Electrical Engineering, Democritus University of Thrace, 67100 Xanthi, Greece.
D. Girginoudi
Affiliation:
Laboratory of Electrical and Electronic Materials Technology, Department of Electrical Engineering, Democritus University of Thrace, 67100 Xanthi, Greece.
N. Georgoulas
Affiliation:
Laboratory of Electrical and Electronic Materials Technology, Department of Electrical Engineering, Democritus University of Thrace, 67100 Xanthi, Greece.
A. Thanailakis
Affiliation:
Laboratory of Electrical and Electronic Materials Technology, Department of Electrical Engineering, Democritus University of Thrace, 67100 Xanthi, Greece.
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Abstract

The dependence of chemical composition, structure and optoelectronic properties of sputtered a-SiC:H thin films on substrate temperature, Ts, and hydrogen flow rate has been studied. The films are amorphous for the growth conditions used in this work. The chemical composition of the alloys is very little influenced by the Ts, whereas the hydrogen content and the optical absorption coefficient depends strongly on Ts and hydrogen flow rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 589
Copyright
Copyright © Materials Research Society 1990

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References

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