Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-18T10:37:53.783Z Has data issue: false hasContentIssue false
  • English
  • Français

High Resolution XRD Studies of Ion Beam Irradiated InGaAs/InP Multi Quantum Wells

Published online by Cambridge University Press:  01 February 2011

S. Dhamodaran ,
N Sathish ,
Anand P Pathak ,
Andrzej Turos ,
Devesh K Avasthi  and
Brij M Arora
S. Dhamodaran
Affiliation:
kdams2003@yahoo.com, University of Hyderabad, School of Physics, Centr al University (P.O), Hyderabad, 500 046, India
N Sathish
Affiliation:
ph03ph11@uohyd.ernet.in, University of Hyderabad, School of Physics, Central University (P.O), Hyderabad, 500 046, India
Anand P Pathak
Affiliation:
appsp@uohyd.ernet.in, University of Hyderabad, School of Physics, Central University (P.O), Hyderabad, 500 046, India, +91-40-23010181 / 23134316, +91-40-23010181 / 23010227
Andrzej Turos
Affiliation:
Andrzej.Turos@itme.edu.pl, Institute of Electronic Materials Technology, Warsaw, 01-919, Poland
Devesh K Avasthi
Affiliation:
dka@iuac.ernet.in, Inter University Accelerator Centre, New Delhi, 110 057, India
Brij M Arora
Affiliation:
brij@tifr.res.in, Tata Institutte of Fundamental Research, Mumbai, 400 005, India
Get access

Abstract

Multi quantum wells of InGaAs/InP grown by metal organic chemical vapor deposition have been irradiated using swift heavy ions. Irradiation has been performed using 150MeV Ag and 200MeV Au ions. Both as-grown and irradiated samples were subjected to rapid thermal annealing at 500 and 7000C for 60s. As-grown, irradiated and annealed samples were subjected to high resolution x-ray diffraction studies. Both symmetric and asymmetric scans were analyzed. The as-grown and Ag ion irradiated samples show sharp and highly ordered satellite peaks whereas, the Au ion irradiated samples show broad and low intense peaks. The higher order satellite peaks of the annealed samples vanished with increase of annealing temperature from 500 to 7000C, indicating mixing induced interfacial disorder. Annealing of irradiated samples show higher mixing and disorder and no higher order satellite peaks were observed. Negligible strain was observed after high temperature annealing of as grown samples. Strain values calculated from the X-ray studies indicate that the irradiated samples have higher strain which has been reduced upon annealing. This indicates that the annealing induced mixing occurs maintaining the lattice parameter close to that of the substrate. The effect of electronic energy loss for interface mixing has been discussed in detail. The role of incident ion fluence in combination with the electronic energy loss will also be discussed in detail. The results have been compared with the literature and discussed in detail.

Keywords

chemical vapor deposition (CVD) (deposition)x-ray diffraction (XRD)radiation effects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1020: Symposium GG – Ion-Beam-Based Nanofabrication , 2007 , 1020-GG07-24
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Gendry, M, Drouot, V, Santinelli, C and Hollinger, G Appl. Phys. Lett. 60, 2249 (1992).Google Scholar
2. Berger, P R, Chang, K, Bhattacharya, P, Singh, J, and Bajaj, K K, Appl. Phys. Lett. 53, 684 (1988).Google Scholar
3. Ekenstedt, M J, Wang, S M and Andersson, T G, Appl. Phys. Lett. 58, 854 (1991).Google Scholar
4. Temkin, H, Chu, S N G, Panish, M B and Logan, R A, Appl. Phys. Lett. 50, 956 (1987).Google Scholar
5. Bassignana, I C, Miner, C J and Puetz, N, J. Appl. Phys. 65, 4299 (1989).Google Scholar
6. Okada, T, Weatherly, G C and McComb, D W, J. Appl. Phys. 81, 2185 (1997).Google Scholar
7. Dao, L V, Gal, M, Carmody, C, Tan, H H and Jagadish, C, J. Appl. Phys. 88, 5252 (2000).Google Scholar
8. Bollet, F, Gillin, W P, Hopkinson, M and Gwilliam, R, J. Appl. Phys. 93, 3881 (2003).Google Scholar
9. Carmody, C, Tan, H H and Jagadish, C, J. Appl. Phys. 93, 4468 (2003).Google Scholar
10. Chu, S N G, Macrander, A T, Strege, K E and Johnston, W D Jr , J. Appl. Phys. 57, 249 (1984).Google Scholar
11. Macrander, A T, Chu, S N G, Strege, K E, Bloemeke, A F and Johnston, W D Jr , Appl. Phys. Lett. 44, 615 (1984).Google Scholar
12. Ryu, S W, Choe, B D and Jeong, W G, Appl. Phys. Lett. 71, 1670 (1997).Google Scholar
13. Kuphal, E, Pocker, A and Eisenbach, A, J. Appl. Phys. 73, 4599 (1993).Google Scholar
14. Emerson, D T and Shealy, J R, Appl. Phys. Lett. 69, 383 (1996).Google Scholar
15. Halliwell, M A G, Lyons, M H, Hill, M J, J. Cryst. Growth. 68, 523 (1984).Google Scholar
16. Bensoussan, S, Malgrange, C and Simkin, M S, J. Appl. Cryst. 20, 222 (1987).Google Scholar
17. Krost, A, Bohrer, J, Roehle, H and Bauer, G, Appl. Phys. Lett. 64, 469 (1994).Google Scholar
18. Vandenberg, J M, Macrander, A T, Hamm, R A and Panish, M B, Phys. Rev. B 44, 3991 (1991).Google Scholar
19. Cornet, D M LaPierrea, R R, Comedi, D and Pusep, Y A, J. Appl. Phys. 100, 43518 (2006).Google Scholar
20. Rao, S V S Nageswara, Pathak, A P, Siddiqui, A M, Avasthi, D K, Muntele, C, Ila, D, Dev, B N, Muralidharan, R, Eichhorn, F, Groetzschel, R, Turos, A, Nucl. Instr. and Meth. B 212 (2003) 442.Google Scholar
21. Dhamodaran, S, Sathish, N, Pathak, A P, Khan, S A, Avasthi, D K, Srinivasan, T, Muralidharan, R and Arora, B M, Nucl. Instr. and Meth. B 256 (2007) 260.Google Scholar
22. Yu, S J, Asahi, H, Emura, S, Gonda, S and Nakashima, K, J. Appl. Phys. 70, 204 (1991).Google Scholar
23. Yu, S J, Takizawa, A J, Asami, K, Emura, S, Gonda, S, Kubo, H, Hamaguchi, C and Hirayama, Y, J. Vac. Sci and Technol. B 9, 2683 (1991).Google Scholar