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High Dose Implantation of Nickel into Silicon

Published online by Cambridge University Press:  26 February 2011

G. J. Campisi ,
H. B. DIETRICH ,
M. Delfino  and
D. K. Sadana
G. J. Campisi
Affiliation:
Naval Research Laboratory, Washington, DC 20375–5000
H. B. DIETRICH
Affiliation:
Naval Research Laboratory, Washington, DC 20375–5000
M. Delfino
Affiliation:
Philips Research Laboratories Sunnyvale, Signetics Corp., Sunnyvale, CA 94086
D. K. Sadana
Affiliation:
Philips Research Laboratories Sunnyvale, Signetics Corp., Sunnyvale, CA 94086
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Abstract

Several silicon wafers were implanted with 58Ni+ at an energy of 170 keV and a current density of 12 μA cm-2 to doses between 5 × 1015 and 1.8 × 1018 ions cm-2. The substrates were phosphorus doped n-type <100> Czochralski grown silicon wafers. The wafers were water cooled during implantation and the surface temperatures was monitored with an infrared pyrometer and controlled to < 70°C. Samples were subsequently furnace annealed at 900°C for 30 min in nitrogen. The as-implanted and annealed samples were analyzed using cross-sectional transmission electron microscopy (XTEM), Rutherford backscattering (RBS) spectroscopy, spreading resistance depth profiling (SRP), and scanning electron microscopy (SEM). Micro-crystallites of NiSi2 (2–5nm) buried within an amorphous matrix formed during the 1.5 × 1017 ions cm-2 dose implantation. For higher doses above 3 × 1017 Ni+ cm-2, ion beam sputtering occurred. After annealing, rapid diffusion of nickel and solid-phase recrystallization of the amorphous regions occurred.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 747
Copyright
Copyright © Materials Research Society 1986

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References

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