Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-17T19:51:42.885Z Has data issue: false hasContentIssue false
  • English
  • Français

Heteroepitaxy on Silicon by Molecular Beam Epitaxy

Published online by Cambridge University Press:  28 February 2011

Leo J. Schowalter
Leo J. Schowalter*
Affiliation:
Physics Dept. and Center for Integrated Electronics Rensselaer Polytechnic Institute, Troy, NY 12181
Get access

Abstract

In recent years extensive research has been conducted on growing heteroepitaxial layers of insulators, metals, and other semiconductors on silicon. This work promises to extend the use of Si (or, at least, Si substrates) far beyond present day devices into hybred semiconductor devices, optoelectronics, ballistic electron devices, and three-dimensional device structures. However, the “art” of heteroepitaxy is still poorly understood and much work remains to be done to realize most practical applications. Molecular beam epitaxy (MBE) represents an attractive technique for research and development of heteroepitaxy because of its relatively low growth temperatures, flexibility in working with different materials, and by providing a good environment for in-situ observation of the heteroepitaxial process. Using examples from recent heteroepitaxial work by molecular beam epitaxy in the areas of CaF2, NiSi2 and CoSi2, and GaAs on Si, this paper discusses how heteroepitaxial quality is affected by the relative surface free energies and strain (due to both lattice and thermal expansion coefficient mismatch). The goal is to produce better heteroepitaxial layers for device applications by an improved understanding of the process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116: Symposium A – Heteroepitaxy on Silicon: Fundamentals, Structures, and Devices , 1988 , 3
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Capasso, F., J. Vac. Sci. Technol. B1, 457 (1983).Google Scholar
2 For example, see Mimura, T., Joshin, K., Hiyamizu, S., Hikosaka, K. and Abe, M., Japan. J. Appl. Phys. 20, L598 (1981).CrossRefGoogle Scholar
3 For example, see Hensel, J.C., Levi, A.F.J., Tung, R.T., and Gibson, J.M., Appl. Phys. Lett. 47, 151 (1985).CrossRefGoogle Scholar
4 For example see, Heiblum, M., Solid-State Electron. 24, 343 (1981).CrossRefGoogle Scholar
5 Shaw, D.W. in Heteroepitaxy on Silicon II, edited by Fan, J.C.C., Phillips, J.M., and Tsaur, B.-Y. (Mat. Res. Soc. Proc. 91, Pittsburgh, PA 1987) pp. 15–30.Google Scholar
6 Schowalter, L.J. and Fathauer, R.W., J. Vac. Sci. Technol. A 4, 1026 (1986).Google Scholar
7 Olmstead, M.A., Uhrberg, R.I.G., Bringans, R.D., and Bachrach, R.Z., J. Vac. Sci. Technol. B4, 1123 (1986).Google Scholar
8 Duh, K.H.G., Chao, P.C., Smith, P.M., Lester, L.F., Lee, B.R., and Hwang, J.C.M., Millimeter-Wave Low-Noise HEMT's, Device Research Conf., Amherst, MA, June 1986, Paper IIA-2.Google Scholar
9 Pearsall, T.P., Bean, J.C., People, R., and Fiory, A.T., Proc. 1” Int.'l Smp. Silicon Molecular Beam Epitaxy, edited by Bean, J.C. (Electrochemical Soc., Pennington, NJ 1985) pp. 400–405.Google Scholar
10 See, for example, The Technology of Molecular Beam Epitaxy, edited by Parker, E. H. C. (Plenum Press, New York, 1985).Google Scholar
11 See Bean, J. C., in Heteroepitaxy on Silicon II, edited by Fan, J.C.C., Phillips, J.M., and Tsaur, B.-Y. (Mat. Res. Soc. Proc. 91, Pittsburgh, PA 1987) p. 269; and references therein.Google Scholar
12 See Lee, J. W., Salerno, J. P., Gale, R. P., and Fan, J. C. C. in Heteroepitaxv on Si II, loc. cit., p. 33.Google Scholar
13 Zogg, H. and Blunier, S., Appl. Phys. Lett. 49, 1531 (1986).Google Scholar
14 Zogg, H., and Norton, P., Techn. Dnigest Int'l Electron Devices Meeting IEDM, Washington, D.C., Dec. 1985; p. 121.Google Scholar
15 See Schowalter, L. J. and Fathauer, R. W., J. Vac. Sci. Technol. A 4, 1026 (1986); and references therein.Google Scholar
16 Sinharoy, S., Hoffman, R. H., Farrow, R.F.C., and Rieger, J. H., J. Vac. Sci. Technol. A3, 2323 (1985).CrossRefGoogle Scholar
17 Kado, Y. and Arita, Y., J. Appl. Phys. 61, 2398 (1987).CrossRefGoogle Scholar
18 Tang, R. T., Levi, A. F. J., and Gibson, J. M., J. Vac. Sci. Technol. B 4, 1435 (1986).CrossRefGoogle Scholar
18 See, for example, Ishiwara, H., Hikosaka, K., and Furukawa, S., J. Appl. Phys. 50, 5302 (1979).Google Scholar
20 See, for example, Ishiwara, H., Hikosaka, K., Nagatomo, M., and Furukawa, S., Surface Sci. 86, 711 (1979).Google Scholar
21 Park, K.-H., Jin, H.-S., Wang, G.-C., Lu, T.-M., Luo, L. and Gibson, W. M., to be publ. in (Mat. Res. Soc. Proc. 102 Pittsburgh, PA 1988).Google Scholar
22 Chu, A. Y. in The Technology and. Physics of Molecular Beam Epitaxy, loc. cit., pp. 1–13.Google Scholar
23 Ishizaka, A., Nakagawa, K., and Shiraki, Y., Collected Papers of MBE-CST-2, 1982, Tokyo (Japanese Society of Applied Physics, Tokyo, 1982), p. 183.Google Scholar
24 Chrenko, R. M., Hall, E. L., Lewis, N., and Smith, G. A. in Characterization of Defects in Materials, edited by Siegel, R. W., Sinclair, R., and Weertman, J. R. (Mat. Res. Soc. Proc. 82, Pittsburgh, PA 1987) pp. 373–378.Google Scholar
25 Kubiak, R. A. A., Leong, W. Y., Houghton, R., and Parker, E. H. C. in Proc. 1s Int.'l Svmp. Silicon Molecular Beam Epitaxv, edited by Bean, J. C. (Electrochemical Soc. Pennington, NJ 1985) pp. 124–131.Google Scholar
26 Bellavance, D. and Liu, J., J. Vac. Sci. Technol. B 5, 751 (1987).CrossRefGoogle Scholar
27 For example, the new model V90S from VG Semicon, Ltd. is being designed to address this problem.Google Scholar
28 Landau, L. D. and Lifshitz, E. M., Statistical Physics, 3rd edition, revised and enlarged by Lifshitz, E. M. and Pitaevskii, L. P. (Pergamon Press, Oxford, 1980), p. 517.Google Scholar
29 Landau, L. D. and Lifshitz, E. M., Theory of Elasticity, (London, Pergamon Press, 1959).Google Scholar
30 Schowalter, L. J., Fathauer, R. W., Goehner, R. P., Turner, L. G., DeBlois, R. W., Hashimoto, S., Peng, J.-L., Gibson, W. M., and Krusius, J. P., J. Appl. Phys. 58, 302 (1985).Google Scholar
31 Mathews, J. W. in Materials Science Series: Epitaxial Growth, Part B, edited by Matthews, J. W. (Academic Press, New York, 1975), p. 559.Google Scholar
32 Hall, E. L., Lewis, N., Fathauer, R. W., Schowalter, L. J., and Mogro-Campero, A. in Intermediate Voltage Microscopy and its Application to Materials Science, edited by Rajan, K., (Philips, Mahwah, NJ, 1987) pp. 110–125.Google Scholar
33 Gilman, J. J., J. Appl. Phys. 31, 2208 (1960).Google Scholar
34 Ishibashi, K. and Furukawa, S., Jpn. J. Appl. Phys. 24, 912 (1985).Google Scholar
35 Hunt, B. D., Lewis, N., Schowalter, L. J., Hall, E. L., and Turner, L. G. in Interfaces, Superlattices, and Thin Films, edited by Dow, J. D. and Schuller, I. K. (Mat. Res. Soc. Proc. 77, Pittsburgh, PA, 1987), 351–356.Google Scholar
36 Tung, R.T., Levi, A.F.J., and Gibson, J.M., Appl. Phys. Lett. 48, 635 (1986).CrossRefGoogle Scholar
37 Hunt, B.D., Lewis, N., Hall, E.L., and Robertson, C.D., J. Vac. Sci. Technol. B5, 749 (1987).Google Scholar
38 Lin, T.L., Fathauer, R.W., Grunthaner, P.J., and d'Anterroches, C., Appl. Phys. Lett. 52, 804 (1988).Google Scholar
39 Tung, R.T. and Hellman, F., Mater. Res. Soc. Symp. Proc. 94, 65 (1987).Google Scholar
40 Tung, R.T. and Batstone, J.L., Appl. Phys. Lett. 52, 648 (1988).CrossRefGoogle Scholar
41 Hashimoto, S., Peng, J.-L., Gibson, W. M., Schowalter, L. J., and Fathauer, R. W., Appl. Phys. Lett. 47, 1071 (1985).Google Scholar
42 Schowalter, L.J., Fathauer, R.W., Ponce, F.A., Anderson, G., and Hashimoto, S., Mat. Res. Soc. Symp. Proc. Vol. 67, 125 (1986).CrossRefGoogle Scholar
43 Hashimoto, S., Schowalter, L.J., Smith, G.A., Lee, E.Y., Gibson, W.M. and Claxton, P.A., this volume.Google Scholar
44 Matyi, R.J., Lee, J.W., and Schaake, H.F., J. Electronic Materials 17, 87 (1988).Google Scholar
45 Schowalter, L.J., Hashimoto, S., Smith, G.A., Gibson, W.M., Lewis, N., Hall, E.L., and Sullivan, P.W. to be publ. in Epitaxy of Semiconductor Layered Structures, edited by Tung, R.T., Dawson, L.R., and Gunshor, R.L., (Mat. Res. Soc. Proc. xxx, Pittsburgh, PA, 1988).Google Scholar
46 Harris, J.S. Jr., Koch, S.M., and Rosner, S.J. in Heteroepitaxy on Silicon II, loc. cit., pp. 3–14.Google Scholar
47 Chrenko, R.M., Schowalter, L.J., Hall, E.L., and Lewis, N. in Layered Structures and Epitaxy, edited by Gibson, J.M., Osbourn, G.C., and Tromp, R.M., (Mat. Res. Soc. Proc. 56, Pittsburgh, PA, 1986), pp. 27–32.Google Scholar