Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-17T14:59:15.069Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth Temperature and Properties of Ge4Sb3Te3 Films

Published online by Cambridge University Press:  01 February 2011

W. D. Song ,
L. P. Shi ,
X. S. Miao ,
X. Hu ,
H. K. Lee ,
R. Zhao ,
J. F. Chong  and
T. C. Chong
W. D. Song
Affiliation:
Data Storage Institute, Agency of Science, Technology and Research, DSI Building, No 5, Engineering Drive 1, Singapore 117608, SINGAPORE
L. P. Shi
Affiliation:
Data Storage Institute, Agency of Science, Technology and Research, DSI Building, No 5, Engineering Drive 1, Singapore 117608, SINGAPORE
X. S. Miao
Affiliation:
Data Storage Institute, Agency of Science, Technology and Research, DSI Building, No 5, Engineering Drive 1, Singapore 117608, SINGAPORE
X. Hu
Affiliation:
Data Storage Institute, Agency of Science, Technology and Research, DSI Building, No 5, Engineering Drive 1, Singapore 117608, SINGAPORE
H. K. Lee
Affiliation:
Data Storage Institute, Agency of Science, Technology and Research, DSI Building, No 5, Engineering Drive 1, Singapore 117608, SINGAPORE
R. Zhao
Affiliation:
Data Storage Institute, Agency of Science, Technology and Research, DSI Building, No 5, Engineering Drive 1, Singapore 117608, SINGAPORE
J. F. Chong
Affiliation:
Data Storage Institute, Agency of Science, Technology and Research, DSI Building, No 5, Engineering Drive 1, Singapore 117608, SINGAPORE
T. C. Chong
Affiliation:
Data Storage Institute, Agency of Science, Technology and Research, DSI Building, No 5, Engineering Drive 1, Singapore 117608, SINGAPORE
Get access

Abstract

The growth temperature and properties of Ge4Sb3Te3 thin films are presented in this paper. The critical growth temperature of Ge4Sb3Te3 is between 300 and 340 °C. The Ge4Sb3Te3 films can only be grown on a substrate below the critical growth temperature. The typical resistivity and carrier density are in the order of 10-4 Ωcm and 1021 cm-3 for crystalline phase. It has a rock salt crystal structure with a lattice constant of 0.602 nm. Ge4Sb3Te3 has a better thermal stability but a lower crystallization speed than Ge2Sb2Te5.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D6.14
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shi, L.P., Chong, T.C., Hu, X. and Yao, H.B., Jpn. J. Appl. Phys. 42, 841 (2003).Google Scholar
2. Miao, X.S., Shi, L.P., Tan, P.K., Li, J.M., Zhao, R., Lim, K.G. and Chong, T.C., Jpn. J. Appl. Phys. 42, 1033 (2003).Google Scholar
3. Kang, D. H., Ahn, D. H., Kim, K. B., Webb, J.F. and Yi, K. W., J. Appl. Phys. 94, 3536 (2003).Google Scholar
4. Wamwangi, D., Njoroge, W.K., Wuttig, M., Thin Solid Films, 408, 310 (2002).Google Scholar
5. Friedrich, I., Weidenhof, V., Njoroge, W., Franz, P. and Wuttig, M., J. Appl. Phys., 87, 4130 (2000).Google Scholar
6. Njoroge, W.K., Woltgens, H.W., Wuttig, M., J. Vac. Sci. Technol. A20, 230 (2002).Google Scholar
7. Song, W.D., Lu, Y.F., Wang, W.J., Ong, C.K., Wang, J.P. and Chong, T.C., IEEE. Trans. Magn. 35, 3013 (1999).Google Scholar
8. Suryanarayana, C. and Norton, M.G., X-ray diffraction (Plenum Press, New York and London, 1998) pp.97–123.Google Scholar
9. Song, W.D., Lu, Y.F., Hong, M.H. and Low, T.S., SPIE, 3550, 19 (1998).Google Scholar
10. Lankhorst, M.H.R., J. Non-Cryst. Solids, 297, 210 (2002).Google Scholar
11. Her, Y. C. and Hsu, Y. S., Jpn. J. Appl. Phys. 42, 804 (2003).Google Scholar
12. Jiang, F. and Okuda, M., Jpn. J. Appl. Phys. 30, 97 (1991).Google Scholar
13. Okuda, M., Naito, H. and Matsushita, T., Jpn. J. Appl. Phys. 31, 466 (1992).Google Scholar