Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-12-06T15:32:47.931Z Has data issue: false hasContentIssue false
  • English
  • Français

Friction Change Induced by Single Mev Ion Impact Measured by Scanning Probe Microscope

Published online by Cambridge University Press:  21 February 2011

Hisato Ogiso ,
Shizuka Nakano ,
Hiroshi Tokumoto  and
Kazushi Yamanaka
Hisato Ogiso
Affiliation:
Joint Research Center for Atom Technology, National Institute for Advanced Interdisciplinary Research, 1–1–4 Higashi, Tsukuba, Ibaraki, 305, Japan Mechanical Engineering Laboratory, 1–2 Namiki, Tsukuba, Ibaraki, 305, Japan.
Shizuka Nakano
Affiliation:
Mechanical Engineering Laboratory, 1–2 Namiki, Tsukuba, Ibaraki, 305, Japan.
Hiroshi Tokumoto
Affiliation:
Joint Research Center for Atom Technology, National Institute for Advanced Interdisciplinary Research, 1–1–4 Higashi, Tsukuba, Ibaraki, 305, Japan
Kazushi Yamanaka
Affiliation:
Mechanical Engineering Laboratory, 1–2 Namiki, Tsukuba, Ibaraki, 305, Japan.
Get access

Abstract

In order to evaluate the damage caused by a single MeV ion impact, we prepared highly oriented pyrolytic graphite specimens, each implanted with 3.1 MeV Au, Ag, Cu and Si ions at a dose of 2.3×1011 cm-2 (2300 μm-2). We then observed specimens by using friction force microscope, and found round regions caused by single-ion impacts on the implanted surface. The frictional force between the surface and the silicon-nitride tip increased in disordered regions. The number density of the regions differed at individual ion-implanted surface, and was about 1000 μm-2 at the Au-implanted surface, 880 μm-2 at the Ag-implanted surface, 372 μm-2 at the Cu-implanted surface, and 44 μπτ2 at the Si-implanted surface. We calculated the electronic stopping power and the probability of knock-on atom generation by the nuclear collision to determine which process affected the density. We found that the difference in the number density was closely related to that of nuclear collisions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 667
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Mate, C.M., McCelland, G.M., Erlandsson, R., and Chiang, S., Phys. Rev.Lett. 59,1942 (1987).Google Scholar
2 Porte, L., Phaner, M., de Villeneuve, C.H., Moncoffre, N., and Tousset, J., Nucl. Instru. Method B44 (1989) 116.Google Scholar
3 Coratger, R., Claverie, A., Chahboun, A., Landry, V., Ajustron, F., and Beauvillain, J., Surface Science 262 (1992) 208.Google Scholar
4 Ogiso, H., Nakano, S., Yamanaka, K., and Koda, T., Proc. of 1st meeting of the Ion Engineering Society of Japan, p153 (1992) Tokyo.Google Scholar
5 Ogiso, H., Nakano, S., Kolosov, O., Yamanka, K., and Koda, T., Proc. of 9th symp. on Surface Layer Modification by Ion Implantation p57 (1993) Tokyo.Google Scholar
6 Bouffard, S., Cousty, J., Pennec, Y., and Thibaudau, F., Radiation Effect and Defects in Solids, (1993) vol.126 p225.Google Scholar
7 Hagen, T. Grafstrom, S., Ackermann, J., Trautmann, C., Vetter, J., and Angert, N., J. Vac. Sei. B21(3), (1994) 1555.Google Scholar
8 Yan, J., Li, Z., Bai, C., Yang, W.S., Wang, Y., Zhao, W., Kang, Y., Zhai, P., and Tang, X. J. Appl. Phys. 75(3), (1994) 1390.Google Scholar
9 Matsukawa, T., Suzuki, S., Fukai, T., Ohdomari, I. Extended abstracts 42nd Spring meeting; The Japan Society of Applied Physics (1995) p588.Google Scholar
10 Ziegler, J.F., Biersack, J. P., and Littmark, U., The Stopping and Range of Ions in Solids, Pergamon Press New York (1985).Google Scholar