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The Finite Size Effect on The Metal-Insulator Transition of VO2 Films Grown by MOCVD

Published online by Cambridge University Press:  21 February 2011

Hyung Kook Kim
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, Illinois 60439–4837
R. P. Chiarello
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, Illinois 60439–4837
Hoydoo You
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, Illinois 60439–4837
M. H. L. Chang
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, Illinois 60439–4837
T. J. Zhang
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, Illinois 60439–4837
D. J. LAM
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, Illinois 60439–4837
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Abstract

We studied the finite size effect on the metal-insulator phase transition and the accompanying tetragonal to monoclinic structural phase transition of VO2 films grown by MOCVD. X-ray diffraction measurements and electrical conductivity measurements were done as a function of temperature for VO2 films with out-of plane particle size ranging from 60–310Å. Each VO2 film was grown on a thin TiO2 buffer layer, which in turn was grown by MOCVD on a polished sapphire (1120) substrate. The transition was found to be first order. As the out-of plane particle size becomes larger, the transition temperature shifts and the transition width narrows. For the 60Å film the transition was observed at ∼61°C with a transition width of ∼10°C, while for the 310Å film the transition temperature was ∼59°C and the transition width ∼2°C. We also observed thermal hysteresis for each film, which became smaller with increasing particle size.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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