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Fabrication, Processing and Characterization of Thin Film ZnO for Integrated Optical Gas Sensors

Published online by Cambridge University Press:  31 January 2011

Eliana Kamińska ,
Anna Piotrowska ,
Iwona Pasternak ,
Marek Ekielski ,
Krystyna Gołaszewska ,
Witold Rzodkiewicz ,
Tomasz Wojciechowski ,
Elżbieta Dynowska ,
Przemysław Struk  and
Tadeusz Pustelny
Eliana Kamińska
Affiliation:
eliana@ite.waw.pl, Institute of Electron Technology, Warsaw, Poland
Anna Piotrowska
Affiliation:
ania@ite.wa.pl, Institute of Electron Technology, Warsaw, Poland
Iwona Pasternak
Affiliation:
iwonap@ite.waw.pl, Institute of Electron Technology, Warsaw, Poland
Marek Ekielski
Affiliation:
ekielski@ite.waw.pl, Institute of Electron Technology, Warsaw, Poland
Krystyna Gołaszewska
Affiliation:
krystyg@ite.waw.pl, Institute of Electron Technology, Warsaw, Poland
Witold Rzodkiewicz
Affiliation:
rzodki@ite.waw.pl, Institute of Electron Technology, Warsaw, Poland
Tomasz Wojciechowski
Affiliation:
twojcie@ifpan.edu.pl, Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
Elżbieta Dynowska
Affiliation:
dynow@ifpan.edu.pl, Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
Przemysław Struk
Affiliation:
Przemyslaw.Struk@polsl.pl, Silesian Univeristy of Technology, Gliwice, Poland
Tadeusz Pustelny
Affiliation:
Tadeusz.Pustelny@polsl.pl, Silesian University of Technology, Gliwice, Poland
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Abstract

Zinc oxide layers deposited on quartz substrates by means of RF reactive magnetron sputtering with subsequent RTP annealing in a nitrogen flow at 400°C and in an oxygen flow at 500°C have been investigated in applications to waveguide structures. The ZnO films reveal a highly c-oriented columnar structure with a surface roughness of 4.3 nm. Annealing causes a significant increase of the lattice constant to the value of 5.210±0.001 Å suggesting the relaxation of the stress in the film. The annealing process causes a significant improvement of propagation properties of the fabricated waveguide structures in comparison to structures using as-deposited ZnO films. The minimal attenuation coefficient of the 630 nm thick films was found to be 2.8 and 3.0 dB/cm for TE0 and TM0 modes respectively.

Keywords

thin filmoptical propertiesthermal stresses
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H05-14
Copyright
Copyright © Materials Research Society 2010

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References

1 Lambeck, P.V., Meas. Sci. Technol. 17, R93 (2006).10.1088/0957-0233/17/8/R01Google Scholar
2 Mazingue, T., Escoubas, L., Spalluto, L., Flory, F., Jacquouton, P., Perrone, A., Kamińska, E., Piotrowska, A., Mihailescu, I., Atanasov, P., Applied Optics 45(7), 1425 (2006).10.1364/AO.45.001425Google Scholar
3 Atanas, J.P., Asmar, R., Khoury, A., Foucaran, A., Sensors and Actuators A 127, 49 (2006).10.1016/j.sna.2005.11.065Google Scholar
4 Kim, H.W., Kim, N.H., Materials Science and Engineering B 103, 297 (2003).10.1016/S0921-5107(03)00281-2Google Scholar
5 Mehan, N., Gupta, V., Sreenivas, K., Mansingh, A., J. Appl. Phys. 96(6), 3134 (2004).10.1063/1.1774267Google Scholar
6 Ryu, M.K., Lee, S.H., Jang, M.S., Panin, G. N., Kang, T.W., J. Appl. Phys. 92(1), 154 (2002).10.1063/1.1483371Google Scholar
7 Lin, S.S., Huang, J.L., Lii, D.F., Surface and Coatings Technology 176, 173 (2004).10.1016/S0257-8972(03)00665-0Google Scholar
8 Hiramatsu, T., Furuta, M., Furuta, H., Matsuda, T., Jpn. J. Appl. Phys. 46(6A), 3319 (2007).10.1143/JJAP.46.3319Google Scholar
9 Ondo-Ndon, R., Pascal-Delannoy, F., Boyer, A., Giani, A., Foucaran, A., Materials Science and Engineering B 987, 68 (2003).10.1016/S0921-5107(02)00406-3Google Scholar