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Excimer Laser Recrystallization of a-Si Employing Aluminum Masking Window

Published online by Cambridge University Press:  17 March 2011

Jae-Hong Jeon
Affiliation:
School of Electrical Engineering, Seoul National University Shinlim-dong, Kwanak-ku, Seoul, 151-742, KOREA
Min-Cheol Lee
Affiliation:
School of Electrical Engineering, Seoul National University Shinlim-dong, Kwanak-ku, Seoul, 151-742, KOREA
Sang-Hoon Jung
Affiliation:
School of Electrical Engineering, Seoul National University Shinlim-dong, Kwanak-ku, Seoul, 151-742, KOREA
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University Shinlim-dong, Kwanak-ku, Seoul, 151-742, KOREA
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Abstract

A new excimer laser recrystallization method of amorphous silicon is proposed to increase the grain size and control the grain boundary locations in polycrystalline silicon films. The proposed method is based on the lateral grain growth which occurs at the interface between molten and unmolten regions. To obtain selectively molten regions, the proposed method employs aluminum patterns on amorphous silicon. The aluminum patterns act as the beam shield during the laser irradiation as well as the lateral heat sink during the solidification period. The high reflectance of aluminum at the wavelength of XeCl excimer laser offers stable beam shielding property, and the high thermal conductivity enhances the lateral heat flow by the quick draining of laterally propagated heat. TEM observation has revealed that the well arranged large grains were successfully obtained.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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