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Evolution of Stress and Relaxation of Strain of Ge and SiGe Alloy Films on Si(001)

Published online by Cambridge University Press:  17 March 2011

R. Koch ,
J. J. Schulz ,
B. Wassermann  and
G. Wedler
R. Koch
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin
J. J. Schulz
Affiliation:
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin
B. Wassermann
Affiliation:
Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, D-14195, Berlin
G. Wedler
Affiliation:
Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, D-14195, Berlin
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Abstract

We report on real time stress measurements by a sensitive cantilever beam technique of Ge and SiGe Alloy Films on Si(001) in combination with structural investigations by in situ STM (scanning tunneling microscopy) and ex situ AFM (atomic force microscopy). Characteristic features in the stress curves provide detailed insight into the development and relief of the misfit strain as well as the respective growth mode. For the Stranski-Krastanow system Ge/Si(001) the strain relaxation proceeds mainly in two steps: (i) by the formation of 3D islands on top of the Ge wetting layer and (ii) via misfit dislocations in larger 3D islands and upon their percolation. Co-deposition of Si influences the stress behavior drastically. The growth mode changes from Stranski-Krastanow to a kinetic 3D island mode at Si concentrations of about 20% leading to the so far smallest quantum dots of the Ge/Si system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 696: Symposium N – Current Issues in Heteroepitaxial Growth--Stress Relaxation and Self Assembly , 2001 , N5.5
Copyright
Copyright © Materials Research Society 2002

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