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Electrodeposited CuInSe2 Thin Film Junctions

Published online by Cambridge University Press:  10 February 2011

R. P. Raffaelle ,
J. G. Mantovani ,
S. G. Bailey ,
A. F. Hepp ,
E. M. Gordon  and
R. Haraway
R. P. Raffaelle
Affiliation:
Florida Institute of Technology, Melbourne, FL 32901, rpr@pss.fit.edu
J. G. Mantovani
Affiliation:
Florida Institute of Technology, Melbourne, FL 32901, rpr@pss.fit.edu
S. G. Bailey
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
A. F. Hepp
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
E. M. Gordon
Affiliation:
Wilberforce University, Wilberforce, OH 45384
R. Haraway
Affiliation:
Wilberforce University, Wilberforce, OH 45384
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Abstract

We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectrocopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 383
Copyright
Copyright © Materials Research Society 1998

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References

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