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Effect of Growth Conditions on Electronic and Structural Properties of GZO Films Grown by Plasma-enhanced Molecular Beam Epitaxy on p-GaN(0001)/Sapphire Templates

Published online by Cambridge University Press:  04 April 2011

H.Y. Liu ,
V. Avrutin ,
N. Izyumskaya ,
M.A. Reshchikov ,
S. Wolgast ,
C. Kurdak ,
A.B. Yankovich ,
A. Kvit ,
P. Voyles  and
Ü. Özgür
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H.Y. Liu
Affiliation:
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284
V. Avrutin*
Affiliation:
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284
N. Izyumskaya
Affiliation:
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284
M.A. Reshchikov
Affiliation:
Physics Department, Virginia Commonwealth University, Richmond, VA 23284
S. Wolgast
Affiliation:
Physics Department, University of Michigan, Ann Arbor, MI 48109
C. Kurdak
Affiliation:
Physics Department, University of Michigan, Ann Arbor, MI 48109
A.B. Yankovich
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706
A. Kvit
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706
P. Voyles
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706
Ü. Özgür
Affiliation:
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284
H. Morkoç
Affiliation:
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23284 Physics Department, Virginia Commonwealth University, Richmond, VA 23284
*
*vavrutin@vcu.edu
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Abstract:

We report on a strong effect of p-GaN surface morphology on the growth mode and surface roughness of ZnO:Ga films grown by plasma-assisted molecular-beam epitaxy on p-GaN/c-sapphire templates. A range of ZnO:Ga surface morphologies varying from rough surfaces with well defined three-dimensional islands, capable to enhance light extraction in light-emitting diodes, to rather smooth surfaces with a surface roughness of ~ 2 nm suitable for vertical-cavity lasers can be achieved by controlling the surface morphologies of p-GaN. Optical transmittance measurements revealed high transparency exceeding 90% in the visible spectral range for ZnO:Ga with both types of surface morphology.

Keywords

thin filmelectrical propertiesmolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1315: Symposium MM – Transparent Conducting Oxides and Applications , 2011 , mrsf10-1315-mm09-03
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

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