Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-18T08:52:55.910Z Has data issue: false hasContentIssue false
  • English
  • Français

Conductive Tungsten-Based Layers Synthesized by Ion Implantation into 6H-Silicon Carbide

Published online by Cambridge University Press:  03 September 2012

H. Weishart ,
J. Schoneich ,
M. Voelskow  and
W. Skorupa
H. Weishart
Affiliation:
Forschungszentrum Rossendorf e.V., Institut fiir Ionenstrahlphysik und Materialforschung, Postfach 510119, D-01314 Dresden, Germany
J. Schoneich
Affiliation:
Forschungszentrum Rossendorf e.V., Institut fiir Ionenstrahlphysik und Materialforschung, Postfach 510119, D-01314 Dresden, Germany
M. Voelskow
Affiliation:
Forschungszentrum Rossendorf e.V., Institut fiir Ionenstrahlphysik und Materialforschung, Postfach 510119, D-01314 Dresden, Germany
W. Skorupa
Affiliation:
Forschungszentrum Rossendorf e.V., Institut fiir Ionenstrahlphysik und Materialforschung, Postfach 510119, D-01314 Dresden, Germany
Get access

Abstract

We studied high dose implantation of tungsten into 6H-silicon carbide in order to synthesize an electrically conductive layer. Implantation was performed at 200 keV with a dose of 1.2x 1017 WIcm 2 at temperatures between 200°C and 400°C. The influence of implantation temperature on the distribution of W in SiC was investigated and compared to results obtained earlier from room temperature (RT) and 500°C implants. Rutherford backscattering spectrometry (RBS) was employed to study the structure and composition of the implanted layers. Implantation at temperatures between RT and 300°C did not influence the depth distribution of C, Si and W. The W depth profile shows a conventional Gaussian shape. Implanting at higher temperatures led to a more confined W rich layer in the SiC. This confinement is explained by Ostwald ripening which is enabled during implantation at temperatures above 300°C. The depth of the implantation induced damage decreases slightly with increasing implantation temperature, except for 400°C implantation. The amount of damage, however, is significantly reduced only for implantation at 500°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 283
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nelson, W.E., Halden, F.A. and Rosengreen, A., J. Appl. Phys. 37, 333 (1966).Google Scholar
2. Pensl, G. and Helbig, R., Festkörperprobleme/Advances in Solid State Physics 30, 133 (1990).Google Scholar
3. Petit, J.B. and Zeller, M.V. in Wide Band Gap Semiconductors, edited by T.D., Moustaka, J.I., Pankove, and Y., Hamakawa (Mater. Res. Soc. Proc. 242, Pittsburgh, PA, 1992) pp. 567–572.Google Scholar
4. Glass, R.C., Spellman, L.M., and Davis, R.F., Appl. Phys. Lett. 59, 2868 (1991).Google Scholar
5. Anikin, M.M., Rastegaeva, M.R., Syrkin, A.L., and Chuiko, I.V., Springer Proceedings in Physics 56, 183 (1992).Google Scholar
6. Crofton, J., Ferrero, J.M., Barnes, P.A., Williams, J. R., Bozack, M.J., Tin, C. C., Ellis, C.D., Spitznagel, J.A. and McMullin, P.G., Springer Proceedings in Physics 71, 176 (1992).Google Scholar
7. Dmitriev, V.A., Irvine, K., Spencer, M., and Kelner, G., Appl. Phys. Lett. 64, 318 (1994).Google Scholar
8. Chaddha, A.K., Parsons, J.D., and Kruaval, G.B., Appl. Phys. Lett. 66, 760 (1995).Google Scholar
9. Uemoto, T., Jpn. J. Appl. Phys. 34, L7 (1995).Google Scholar
10. Crofton, J., McMullin, P.G., Williams, J. R., and Bozack, M.J., J. Appl. Phys. 77, 1317 (1995).Google Scholar
11. Baud, L., Jaussaud, C., Madar, R., Bernard, C., Chen, J.S., and Nicolet, M.A., Mat. Sci. Eng. B29, 126 (1995).Google Scholar
12. Zhang, H., PhD thesis, Friedrich Alexander Universität Erlangen, 1990.Google Scholar
13. Geib, K.M., Wilson, C., Long, R.G., and Wilmsen, C.W., J. Appl. Phys. 68, 2796 (1990).Google Scholar
14. Jacob, C., Nishino, S., Mehregany, M., and Pirouz, P., in Silicon Carbide and Related Materials (Institute of Physics Publishing, Bristol and Philadelphia, 1994) ch.3 p.247.Google Scholar
15. Weishart, H., Schoneich, J., Steffen, H.-J., Matz, W., and Skorupa, W. in Beam-Solid Interactions for Materials Synthesis and Characterization, edited by D.E., Luzzi, T.F., Heinz, M., Iwaki, and D.C., Jacobson (Mater. Res. Soc. Proc. 354, Pittsburgh, PA, 1995) pp. 177–182; Nucl. Instr. Meth. B12, 338 (1996).Google Scholar
16. Weishart, H., Matz, W., and Skorupa, W. in III-Nitride SiC, and Diamond Materials for Electronic Devices, edited by D.K., Gaskill, C., Brandt, and R.J., Nemanich (Mater. Res. Soc. Proc. 423, Pittsburgh, PA, 1997) pp..Google Scholar
17. Vardiman, R.G., Materials Science and Engineering A177, 209 (1994).Google Scholar
18. Doolittle, L.R., Nucl. Inst. Meth. B9, 334 (1985).Google Scholar
19. Heindl, J., Strunk, H.P., Heft, A., Bachmann, T., Glaser, E., Wendler, E. and Wesch, W., Inst. Phys. Conf. Ser. No 146, 435 (1995).Google Scholar
20. Wesch, W., Heft, A., Wendler, E., Bachmann, T. and Glaser, E., Nuc. Instr. Meth. B96, 335–38 (1995).Google Scholar
21. White, A.E., Short, K.T., Dynes, R.C., Gibson, J.M. and Hull, R., Mat. Res. Soc. Symp. Proc. 107, 3 (1988).Google Scholar