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Charge Carrier Transport in c-Si/a-Si:H Heterojunctions

Published online by Cambridge University Press:  01 January 1993

A. Sanders ,
H.-C. Neitzert ,
C. Swiatkqwski  and
M. Kunst
A. Sanders
Affiliation:
Hahn-Meitner-lnstitut, S1: Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
H.-C. Neitzert
Affiliation:
LPICM, Ecole Polytechnique, Palaiseau, France
C. Swiatkqwski
Affiliation:
Hahn-Meitner-lnstitut, S1: Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
M. Kunst
Affiliation:
Hahn-Meitner-lnstitut, S1: Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
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Abstract

Contactless transient photoconductivity measurements in a- Si:H/c-Si heterojunctions are presented. The experimental data are decomposed in the contribution of excess electrons in a-Si:H, the contribution of excess carriers in c-Si and the contribution of excess carriers injected from a-Si:H into c-Si. A value for the electron drift mobility of in a-Si:H of 1cm2 V-1 s-1 is determined. At low excitation densities a high injection efficiency is observed, which is quenched by bias illumination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 1055
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Madan, A. Shaw, M.P., The Physics and Applications of amorphous Semiconductors,Academic, New York 1988 Google Scholar
[2] Kunst, M. and Sanders, A., Semicond.Sci.Technol. 7, 51 (1992)Google Scholar
[3] Kunst, M. and Neitzert, H.-C., J.Appl.Phys. 69, 8320 (1991)Google Scholar