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Characterization of Retention Phenomena of Micron-Size Electrical Domains in Pzt Thin Films

Published online by Cambridge University Press:  10 February 2011

Seungbum Hong ,
Hyunjung Shin ,
Y. Eugene Pak  and
Kwangsoo No
Seungbum Hong
Affiliation:
Electronic and Optical Materials Lab., Korea Advanced Institute of Science and Technology, Taejon 305–701, Korea, seungbum@kaist.ac.kr
Hyunjung Shin
Affiliation:
Micro Systems Lab., Samsung Advanced Institute of Technology, P. O. Box 111, Suwon 440–600, Korea
Y. Eugene Pak
Affiliation:
Micro Systems Lab., Samsung Advanced Institute of Technology, P. O. Box 111, Suwon 440–600, Korea
Kwangsoo No
Affiliation:
Electronic and Optical Materials Lab., Korea Advanced Institute of Science and Technology, Taejon 305–701, Korea, seungbum@kaist.ac.kr
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Abstract

The retention phenomena of purposely aligned micron-size domains (defined as “bits”) in Pb(Zr,Ti)O3 thin films were characterized by atomic force microscopy (AFM) combined with a lock-in amplifier. It is found that the retention loss occurs by “region by region” showing local variation of the rate of the loss. Furthermore, the total retention loss can be successfully described by an extended exponential decay, which implies a narrow distribution of the relaxation times of the domains. This probably comes from the fact that the micron-size bits consist a few hundreds of domains. Along with the characterization, the effects of the bit size and the poling time per unit area on the retention characteristics were investigated. Based on our observations, it is concluded that the retention time is proportional to both the poling time per unit area and the bit size. This trend is successfully explained by a kinetic model developed by our group.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 574: Symposia BB – Multicomponent Oxide Films for Electronics , 1999 , 95
Copyright
Copyright © Materials Research Society 1999

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